- 您現在的位置：買賣IC網 > PDF目錄384459 > HY27SF081G2M-V (Hynix Semiconductor Inc.) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory PDF資料下載
參數資料
| 型號： | HY27SF081G2M-V |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| 中文描述： | 1Gbit的（128Mx8bit / 64Mx16bit）NAND閃存 |
| 文件頁數： | 1/48頁 |
| 文件大小： | 476K |
| 代理商： | HY27SF081G2M-V |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁
Rev 0.7 / Apr. 2005
1
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Document Title
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
Revision History
Revision
No.
History
Draft Date
Remark
0.0
1) Initial Draft.
Aug. 2004
Preliminary
0.1
1) Correct Fig.10 Sequential out cycle after read
2) Add the text to Fig.1, Table.1, Table.2
- text : IO15 - IO8 (x16 only)
3) Delete ‘3.2 Page program NOTE 1.
- Note : if possible it is better to remove this constrain
4) Change the text ( page 10,13, 45)
- 2.2 Address Input : 28 Addresses -> 27 Addresses
- 3.7 Reset : Fig.29 -> Fig.30
- 5.1 Automatic page read after power up : Fig.30 -> Fig.29
5) Add 5.3 Addressing for program operation & Fig.34
1) Change TSOP, WSOP, FBGA package dimension & figures.
- Change TSOP, WSOP, FBGA package mechanical data
- Change FBGA thickness (1.2 -> 1.0 mm)
2) Correct TSOP, WSOP Pin configurations.
- 38th NC pin has been changed Lockpre
(figure 3,4)
3) Edit figure 15,19 & table 4
4) Add Bad Block Management
5) Change Device Identifier 3rd Byte
- 3rd Byte ID is changed. (reserved -> don't care)
- 3rd Byte ID table is deleted.
1) Add Errata
Sep. 2004
Preliminary
0.2
Oct. 2004
Preliminary
0.3
2) LOCKPRE is changed to PRE.
- Texts, Table, Figures are changed.
3) Add Note.4 (table.14)
4) Block Lock Mechanism is deleted.
- Texts, Table, figures are deleted.
5) Add Application Note(Power-On/Off Sequence & Auto Sleep mode.)
- Texts & Figures are added.
6) Edit the figures. (#10~25)
1) Change AC characteristics(tREH)
before: 20ns -> after: 30ns
2) Edit Note.1 (page. 21)
3) Edit the Application note 1,2
4) Edit The Address cycle map (x8, x16)
Nov.29 2004
Preliminary
0.4
Jan.19 2005
Preliminary
tCLS
tCLH
tWP
tALS
tALH
tDS
tWC
tR
Specification
0
10
25
0
10
20
50
25
Relaxed value
5
15
40
5
15
25
60
27
相關PDF資料 |
PDF描述 |
|---|---|
| HY27SF081G2M-VES | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-VIB | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-VIP | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-VIS | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2M-VPMS | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY27SF081G2M-VCB | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-VCP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-VCS | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-VEB | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-VEP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
發布緊急采購，3分鐘左右您將得到回復。