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參數資料
| 型號： | HY27US16121M |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| 中文描述： | 512兆（64Mx8bit / 32Mx16bit）NAND閃存 |
| 文件頁數： | 14/43頁 |
| 文件大小： | 729K |
| 代理商： | HY27US16121M |
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Rev 0.6 / Oct. 2004
14
HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Read Memory Array
Each operation to read the memory area starts with a pointer operation as shown in the Pointer Operations section.
The device defaults to Read A mode after powerup or a Reset operation. Devices, where page0 is read automatically at
power-up, are available on request.
When reading the spare area addresses:
- A0 to A3 (x8 devices)
- A0 to A2 (x16 devices)
are used to set the start address of the spare area while addresses:
- A4 to A7 (x8 devices)
- A3 to A7 (x16 devices)
are ignored.
Once the Read A or Read C commands have been issued they do not need to be reissued for subsequent read opera-
tions as the pointer remains in the respective area. However, the Read B command is effective for only one operation,
once an operation has been executed in Area B the pointer returns automatically to Area A and so another Read B
command is required to start another read operation in Area B.
Once a read command is issued three types of operations are available: Random Read, Page Read and Sequential Row
Read.
Random Read
Each time the command is issued the first read is Random Read.
Page Read
After the Random Read access the page data is transferred to the Page Buffer in a time of t
WHBH
(refer to Table 15 for
value). Once the transfer is complete the Ready/Busy signal goes High. The data can then be read out sequentially
(from selected column address to last column address) by pulsing the Read Enable signal.
Sequential Row Read
After the data in last column of the page is output, if the Read Enable signal is pulsed and Chip Enable remains Low
then the next page is automatically loaded into the Page Buffer and the read operation continues. A Sequential Row
Read operation can only be used to read within a block. If the block changes a new read command must be issued.
Refer to Figures 12 and 13 for details of Sequential Row Read operations. To terminate a Sequential Row Read opera-
tion set the Chip Enable signal to High for more than t
EHEL
. Sequential Row Read is not available when the Sequential
row read option is disabled.
相關PDF資料 |
PDF描述 |
|---|---|
| HY29F002TC-70 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002TC-45 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002TC-55 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002T | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002TC-90 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY27US16122B | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27US161G1M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
| HY27US16281A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory |
| HY27US16282A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory |
| HY27US16561A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
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