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參數資料
| 型號： | HY29F002TC-45 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| 中文描述： | 256K X 8 FLASH 5V PROM, 45 ns, PQCC32 |
| 封裝： | PLASTIC, LCC-32 |
| 文件頁數： | 1/38頁 |
| 文件大小： | 381K |
| 代理商： | HY29F002TC-45 |
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KEY FEATURES
5 Volt Read, Program, and Erase
– Minimizes system-level power requirements
High Performance
– Access times as fast as 45 ns
Low Power Consumption
– 20 mA typical active read current
– 30 mA typical program/erase current
– 1 μA typical CMOS standby current
Compatible with JEDEC Standards
– Package, pinout and command-set
compatible with the single-supply Flash
device standard
– Provides superior inadvertent write
protection
Sector Erase Architecture
– Boot sector architecture with top boot
block location
– One 16 Kbyte, two 8 Kbyte, one 32 Kbyte
and three 64K byte sectors
– A command can erase any combination of
sectors
– Supports full chip erase
Erase Suspend/Resume
– Temporarily suspends a sector erase
operation to allow data to be read from, or
programmed into, any sector not being
erased
Sector Protection
– Any combination of sectors may be
locked to prevent program or erase
operations within those sectors
Temporary Sector Unprotect
– Allows changes in locked sectors
(requires high voltage on RESET# pin)
Internal Erase Algorithm
– Automatically erases a sector, any
combination of sectors, or the entire chip
Internal Programming Algorithm
– Automatically programs and verifies data
at a specified address
Fast Program and Erase Times
– Byte programming time: 7 μs typical
– Sector erase time: 1.0 sec typical
– Chip erase time: 7 sec typical
Data# Polling and Toggle Status Bits
– Provide software confirmation of
completion of program or erase
operations
Minimum 100,000 Program/Erase Cycles
Space Efficient Packaging
– Available in industry-standard 32-pin
TSOP and PLCC packages
Revision 4.1, May 2001
GENERAL DESCRIPTION
The HY29F002T is an 2 Megabit, 5 volt-only
CMOS Flash memory organized as 262,144
(256K) bytes. The device is offered in industry-
standard 32-pin TSOP and PLCC packages.
The HY29F002T can be programmed and erased
in-system with a single 5-volt V
CC
supply. Inter-
nally generated and regulated voltages are pro-
vided for program and erase operations, so that
the device does not require a high voltage power
supply to perform those functions. The device can
also be programmed in standard EPROM pro-
grammers. Access times as fast as 55ns over the
full operating voltage range of 5.0 volts ± 10% are
offered for timing compatibility with the zero wait
state requirements of high speed microprocessors.
A 45ns version operating over 5.0 volts ± 5% is
also available. To eliminate bus contention, the
A[17:0]
18
CE#
OE#
WE#
8
DQ[7:0]
RESET#
LOGIC DIAGRAM
HY29F002T
2 Megabit (256K x 8), 5 Volt-only, Flash Memory
相關PDF資料 |
PDF描述 |
|---|---|
| HY29F002TC-55 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002T | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002TC-90 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002TT-45 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002TT-55 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY29F002TC-45E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F002TC-45I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F002TC-55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002TC-55E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F002TC-55I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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