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參數資料
| 型號： | HY29F002T |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| 中文描述： | 2兆位（256K × 8），5伏只，閃存 |
| 文件頁數： | 17/38頁 |
| 文件大小： | 381K |
| 代理商： | HY29F002T |
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17
Rev. 4.1/May 01
HY29F002T
Read DQ[7:0]
at Valid Address (Note 1)
DQ[6] Toggled
NO
(Note 3)
YES
PROGRAM/ERASE
COMPLETE
DQ[5] = 1
NO
YES
Read DQ[7:0]
at Valid Address (Note 1)
DQ[6] Toggled
(Note 2)
NO
YES
PROGRAM/ERASE
EXCEEDED TIME ERROR
Notes
:
1. During programming, the program address.
During sector erase, an address within any sector scheduled for erasure.
2. Recheck DQ[6] since toggling may stop at the same time as DQ[5] changes from 0 to 1.
3. Use this path if testing for Program/Erase status.
4. Use this path to test whether sector is in Erase Suspend mode.
Read DQ[7:0]
at Valid Address (Note 1)
START
Read DQ[7:0]
DQ[2] Toggled
NO
SECTOR BEING READ
IS IN ERASE SUSPEND
Read DQ[7:0]
YES
NO
(Note 4)
SECTOR BEING READ
IS NOT IN ERASE SUSPEND
Figure 8. Toggle Bit I and II Test Algorithm
to a
‘
1
’
. Refer to the
“
Sector Erase Command
”
section for additional information. Note that the
sector erase timer does not apply to the Chip Erase
command.
After the initial Sector Erase command sequence
is issued, the system should read the status on
DQ[7] (Data# Polling) or DQ[6] (Toggle Bit I) to
ensure that the device has accepted the command
sequence, and then read DQ[3]. If DQ[3] is a
‘
1
’
,
the internally controlled erase cycle has begun and
HARDWARE DATA PROTECTION
all further sector erase data cycles or commands
(other than Erase Suspend) are ignored until the
erase operation is complete. If DQ[3] is a
‘
0
’
, the
device will accept a sector erase data cycle to mark
an additional sector for erasure. To ensure that
the data cycles have been accepted, the system
software should check the status of DQ[3] prior to
and following each subsequent sector erase data
cycle. If DQ[3] is high on the second status check,
the last data cycle might not have been accepted.
The HY29F002T provides several methods of pro-
tection to prevent accidental erasure or program-
ming which might otherwise be caused by spuri-
ous system level signals during V
CC
power-up and
power-down transitions, or from system noise.
These methods are described in the sections that
follow.
Command Sequences
Commands that may alter array data require a
sequence of cycles as described in Table 5. This
provides data protection against inadvertent writes.
Low V
CC
Write Inhibit
To protect data during V
CC
power-up and power-
down, the device does not accept write cycles
when V
CC
is less than V
LKO
(typically 3.7 volts). The
command register and all internal program/erase
circuits are disabled, and the device resets to the
Read mode. Writes are ignored until V
CC
is greater
than V
LKO
. The system must provide the proper
signals to the control pins to prevent unintentional
writes when V
CC
is greater than V
LKO
.
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|---|---|
| HY29F002TC-90 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002TT-45 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002TT-55 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002TT-70 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002TT-90 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY29F002TC-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F002TC-12E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F002TC-12I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F002TC-45 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002TC-45E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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