欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: HY29F002TC-90
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
中文描述: 256K X 8 FLASH 5V PROM, 90 ns, PQCC32
封裝: PLASTIC, LCC-32
文件頁數(shù): 33/38頁
文件大小: 381K
代理商: HY29F002TC-90
33
Rev. 4.1/May 01
HY29F002T
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
r
e
t
m
a
r
a
P
C
E
D
E
J
d
t
S
t
V
A
V
A
t
C
W
i
e
y
C
e
W
t
L
W
V
A
t
S
A
u
S
s
s
e
r
d
A
t
X
A
L
W
t
H
A
d
H
s
s
e
r
d
A
t
H
W
V
D
t
S
D
i
p
u
S
a
D
t
X
D
H
W
t
H
D
m
i
d
H
a
D
t
L
E
H
G
t
L
E
H
G
y
v
o
c
e
R
d
a
e
R
t
L
E
L
W
t
S
W
i
p
u
S
#
E
W
t
H
W
H
E
t
H
W
i
d
H
#
E
W
t
H
E
L
E
t
P
C
W
e
s
P
#
E
C
t
L
E
H
E
t
H
P
C
W
e
s
P
#
E
C
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25
°
C, V
= 5.0 volts, 100,000 cycles. In addition,
programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-
tions of 90
°
C, V
= 4.5 volts (4.75 volts for 55 ns version), 100,000 cycles.
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
command. See Table 5 for further information on command sequences.
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes
are programmed to 0x00 before erasure.
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most
bytes program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the maximum
byte program time specified is exceeded. See Write Operation Status section for additional information.
n
o
p
c
s
e
D
n
o
p
0
7
0
7
O
-
d
e
5
5
e
5
5
p
-
S
t
U
5
4
5
4
-
0
9
0
9
-
)
e
N
e
m
i
e
m
i
e
m
e
m
i
e
m
e
m
h
g
h
(
e
m
p
n
n
n
n
n
n
n
n
n
n
p
y
T
a
M
y
T
a
M
y
T
a
M
y
T
a
M
y
T
n
M
M
M
M
M
M
M
M
M
M
M
s
s
s
s
s
s
s
s
s
s
s
s
n
n
n
n
n
n
n
n
n
n
μ
μ
e
s
e
s
e
s
e
s
e
s
e
s
e
y
e
y
0
0
5
4
2
5
5
4
2
5
0
4
3
5
5
4
4
0
0
0
0
e
W
e
r
B
e
0
3
0
3
5
3
5
4
h
0
7
0
2
t
1
H
W
H
W
t
1
H
W
H
W
)
,
,
s
e
N
(
n
o
r
p
O
g
n
m
m
a
r
o
r
P
e
B
x
0
3
8
4
1
8
7
5
0
0
0
0
1
)
,
,
,
s
e
N
(
n
o
r
p
O
g
n
m
m
a
r
o
r
P
p
C
p
x
p
x
p
x
p
c
c
c
c
c
c
t
2
H
W
H
W
t
2
H
W
H
W
)
,
,
s
e
N
(
n
o
r
p
O
e
s
a
r
E
r
e
S
t
3
H
W
H
W
t
3
H
W
H
W
)
,
,
s
e
N
(
n
o
r
p
O
e
s
a
r
E
p
C
5
e
c
n
a
r
d
n
E
e
y
C
m
a
r
o
r
P
d
n
a
e
s
a
r
E
0
0
0
0
s
s
c
c
0
相關PDF資料
PDF描述
HY29F002TT-45 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F002TT-55 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F002TT-70 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F002TT-90 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F040A 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
HY29F002TC-90E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
HY29F002TC-90I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
HY29F002TP-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
HY29F002TP-12E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
HY29F002TP-12I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
主站蜘蛛池模板: 探索| 广元市| 府谷县| 龙岩市| 丹巴县| 筠连县| 榕江县| 重庆市| 伊吾县| 崇阳县| 洛宁县| 博湖县| 岳阳市| 台湾省| 石首市| 安泽县| 霍州市| 温州市| 忻城县| 万荣县| 北票市| 荆州市| 新干县| 潼南县| 昭觉县| 共和县| 塔城市| 阜平县| 清苑县| 收藏| 民丰县| 江川县| 东平县| 新安县| 临西县| 江达县| 岳阳市| 东城区| 合山市| 孟村| 逊克县|