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參數(shù)資料
| 型號(hào)： | HY29F002TT-90 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| 中文描述： | 256K X 8 FLASH 5V PROM, 90 ns, PDSO32 |
| 封裝： | TSOP-32 |
| 文件頁數(shù)： | 9/38頁 |
| 文件大小： | 381K |
| 代理商： | HY29F002TT-90 |
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9
Rev. 4.1/May 01
HY29F002T
START
NOTE: All sectors must be
previously protected.
Set: TRYCNT = 1
Set: A[9] = CE# = OE# = V
ID
Set: RESET# = V
IH
WE# = V
IL
Wait t
WPP2
Set:
A[9] = V
OE# = CE# = V
IL
Read Data
Data = 0x00
NSEC = 6
YES
TRYCNT = 1000
NO
Increment TRYCNT
NO
YES
DEVICE FAILURE
NO
YES
Remove V
ID
from A[9]
SECTOR UNPROTECT
COMPLETE
APPLY V
CC
Set Sector Address:
A[17:13] = Sector NSEC
A[0] = A[6] = V
A[1] = V
IH
IL
NSEC = NSEC + 1
Set: NSEC = 0
WE# = V
IH
Figure 2. Sector Unprotect Procedure
START
RESET# = V
(All protected sectors
become unprotected)
Perform Program or Erase
Operations
RESET# = V
(All previously protected
sectors return to
protected state)
TEMPORARY SECTOR
UNPROTECT COMPLETE
Figure 3. Temporary Sector Unprotect
DEVICE COMMANDS
Device operations are initiated by writing desig-
nated address and data
command sequences
into
the device. A command sequence is composed
of one, two or three of the following sub-segments:
an
unlock cycle
, a
command cycle
and a
data
cycle
. Table 4 summarizes the composition of the
valid command sequences implemented in the
HY29F002T, and these sequences are fully de-
scribed in Table 5 and in the sections that follow.
Writing incorrect address and data values or writ-
ing them in the improper sequence resets the
HY29F002T to the Read mode.
Read/Reset 1, 2 Commands
The HY29F002T automatically enters the Read
mode after device power-up, after the RESET#
input is asserted and upon the completion of cer-
tain commands. Read/Reset commands are not
required to retrieve data in these cases.
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| HY29F040A | 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
| HY29F080T70 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080G12 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080G70 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29F002TT-90E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F002TT-90I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F040A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
| HY29F040AC-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
| HY29F040AC-12E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
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