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| 型號(hào)： | HY29F080G-70 |
| 廠(chǎng)商： | HYNIX SEMICONDUCTOR INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | x8 Flash EEPROM |
| 中文描述： | 1M X 8 FLASH 5V PROM, 70 ns, PDSO44 |
| 封裝： | PLASTIC, SOP-44 |
| 文件頁(yè)數(shù)： | 4/38頁(yè) |
| 文件大小： | 366K |
| 代理商： | HY29F080G-70 |
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4
Rev. 6.1/May 01
HY29F080
CONVENTIONS
Unless otherwise noted, a positive logic (active
High) convention is assumed throughout this docu-
ment, whereby the presence at a pin of a higher,
more positive voltage (nominally 5VDC) causes
assertion of the signal. A
‘
#
’
symbol following the
signal name, e.g., RESET#, indicates that the sig-
nal is asserted in a Low state (nominally 0 volts).
Whenever a signal is separated into numbered
bits, e.g., DQ[7], DQ[6], ..., DQ[0], the family of
bits may also be shown collectively, e.g., as
DQ[7:0].
The designation 0xNNNN (N = 0, 1, 2, . . . , 9, A, .
. . , E, F) indicates a number expressed in hexa-
decimal notation. The designation 0bXXXX indi-
cates a number expressed in binary notation (X =
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SIGNAL DESCRIPTIONS
MEMORY ARRAY ORGANIZATION
The 1 MByte Flash memory array is organized into
sixteen 64 KByte blocks called
sectors
(S0, S1, . .
. , S15). A sector is the smallest unit that can be
erased. Adjacent pairs of sectors (S0/S1, S2/S3,
. . . , S14/S15) are designated as a
sector group
.
A sector group is the smallest unit which can be
protected to prevent accidental or unauthorized
erasure. See
‘
Bus Operations
’
and
‘
Command
Definitions
’
sections of this document for additional
information on these functions.
Table 1 defines the sector addresses, sector group
addresses and corresponding address ranges for
the HY29F080.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29F080G-90 | x8 Flash EEPROM |
| HY29F080R-12 | x8 Flash EEPROM |
| HY29F080R-70 | x8 Flash EEPROM |
| HY29F080R-90 | x8 Flash EEPROM |
| HY29F080T-12 | x8 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29F080G-70E | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x8 Flash EEPROM |
| HY29F080G90 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080G-90 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:x8 Flash EEPROM |
| HY29F080G-90E | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x8 Flash EEPROM |
| HY29F080R12 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
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