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參數資料
| 型號： | HY29F080G12 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| 中文描述： | 8兆位（1米× 8），5伏只，閃存 |
| 文件頁數： | 4/38頁 |
| 文件大小： | 366K |
| 代理商： | HY29F080G12 |
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4
Rev. 6.1/May 01
HY29F080
CONVENTIONS
Unless otherwise noted, a positive logic (active
High) convention is assumed throughout this docu-
ment, whereby the presence at a pin of a higher,
more positive voltage (nominally 5VDC) causes
assertion of the signal. A
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signal name, e.g., RESET#, indicates that the sig-
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bits may also be shown collectively, e.g., as
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. . , E, F) indicates a number expressed in hexa-
decimal notation. The designation 0bXXXX indi-
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SIGNAL DESCRIPTIONS
MEMORY ARRAY ORGANIZATION
The 1 MByte Flash memory array is organized into
sixteen 64 KByte blocks called
sectors
(S0, S1, . .
. , S15). A sector is the smallest unit that can be
erased. Adjacent pairs of sectors (S0/S1, S2/S3,
. . . , S14/S15) are designated as a
sector group
.
A sector group is the smallest unit which can be
protected to prevent accidental or unauthorized
erasure. See
‘
Bus Operations
’
and
‘
Command
Definitions
’
sections of this document for additional
information on these functions.
Table 1 defines the sector addresses, sector group
addresses and corresponding address ranges for
the HY29F080.
相關PDF資料 |
PDF描述 |
|---|---|
| HY29F080G70 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080G90 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080R12 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080R70 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080R90 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY29F080G-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 Flash EEPROM |
| HY29F080G-12E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F080G-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F080G-15E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F080G-15I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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