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| 型號(hào)： | HY29F080R-12 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | x8 Flash EEPROM |
| 中文描述： | 1M X 8 FLASH 5V PROM, 120 ns, PDSO40 |
| 封裝： | REVERSE, TSOP-40 |
| 文件頁(yè)數(shù)： | 33/38頁(yè) |
| 文件大小： | 366K |
| 代理商： | HY29F080R-12 |
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33
Rev. 6.1/May 01
HY29F080
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25
°
C, V
= 5.0 volts, 100,000 cycles. In addition,
programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-
tions of 90
°
C, V
= 4.5 volts, 100,000 cycles.
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
command. See Table 5 for further information on command sequences.
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes
are programmed to 0x00 before erasure.
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most
bytes program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the maximum
byte program time specified is exceeded. See Write Operation Status section for additional information.
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