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參數資料
| 型號： | HY29F080R70 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| 中文描述： | 8兆位（1米× 8），5伏只，閃存 |
| 文件頁數： | 15/38頁 |
| 文件大小： | 366K |
| 代理商： | HY29F080R70 |
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15
Rev. 6.1/May 01
HY29F080
The Electronic ID command sequence is initiated
by writing two unlock cycles, followed by the Elec-
tronic ID command. The device then enters the
Electronic ID mode, and:
A read cycle at address 0xXXX00 retrieves the
manufacturer code (Hynix = 0xAD).
A read cycle at address 0xXXX01 returns the
device code (29F080 = 0xD5).
A read cycle containing a sector group address
(SGA) in A[19:17] and the address 0x02 in
A[7:0] returns 0x01 if that sector is protected,
or 0x00 if it is unprotected.
The host system may read at any address any
number of times, without initiating another com-
mand sequence. Thus, for example, the host may
determine the protection status for all sector
groups by doing successive reads at address 0x02
while changing the SGA in A[19:17] for each cycle.
The system must write the Reset command to exit
the Electronic ID mode and return to the Read
mode, or to the Erase Suspend mode if the de-
vice was in that mode when the command se-
quence was issued.
WRITE OPERATION STATUS
The HY29F080 provides a number of facilities to
determine the status of a program or erase op-
eration. These are the RY/BY# (Ready/Busy#)
pin and certain bits of a status word which can be
Table 6. Write and Erase Operation Status Summary
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read from the device during the programming and
erase operations. Table 6 summarizes the status
indications and further detail is provided in the
subsections which follow.
Notes:
1. A valid address is required when reading status information. See text for additional information.
2. DQ[5] status switches to a
‘
1
’
when a program or erase operation exceeds the maximum timing limit.
3. A
‘
1
’
during sector erase indicates that the 50 μs timeout has expired and active erasure is in progress. DQ[3] is not
applicable to the chip erase operation.
4. Equivalent to
‘
No Toggle
’
because data is obtained in this state.
5. Programming can be done only in a non-suspended sector (a sector not marked for erasure).
RY/BY# - Ready/Busy#
RY/BY# is an open-drain output pin that indicates
whether a programming or erase Automatic Algo-
rithm is in progress or has completed. A pull-up
resistor to V
CC
is required for proper operation. RY/
BY# is valid after the rising edge of the final WE#
pulse in the corresponding command sequence.
If the output is Low (busy), the device is actively
erasing or programming, including programming
while in the Erase Suspend mode. If the output is
High (ready), the device has completed the op-
eration and is ready to read array data in the nor-
mal or Erase Suspend modes, or it is in the standby
mode.
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| HY29F080R90 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
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| HY29F080G-12 | x8 Flash EEPROM |
| HY29F080T90 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HY29F080R-70 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 Flash EEPROM |
| HY29F080R-70E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F080R90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080R-90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 Flash EEPROM |
| HY29F080R-90E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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