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參數資料
| 型號： | HY29F080T12 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| 中文描述： | 8兆位（1米× 8），5伏只，閃存 |
| 文件頁數： | 17/38頁 |
| 文件大小： | 366K |
| 代理商： | HY29F080T12 |
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17
Rev. 6.1/May 01
HY29F080
or erase-suspended (see below). After an Erase
command sequence is written, if all sectors se-
lected for erasing are protected, DQ[6] toggles for
approximately 100 μs, then returns to reading ar-
ray data. If at least one selected sector is not
protected, the Automatic Erase algorithm erases
the unprotected sectors, and ignores the selected
sectors that are protected.
DQ[2] - Toggle Bit II
Toggle Bit II, DQ[2], when used with DQ[6], indi-
cates whether a particular sector is actively eras-
ing or whether that sector is erase-suspended.
Toggle Bit II is valid after the rising edge of the
final WE# pulse in the command sequence. The
device toggles DQ[2] with each OE# or CE# read
cycle.
DQ[2] toggles when the host reads at addresses
within sectors that have been selected for erasure,
but cannot distinguish whether the sector is ac-
tively erasing or is erase-suspended. DQ[6], by
comparison, indicates whether the device is ac-
tively erasing or is in Erase Suspend, but cannot
distinguish which sectors are selected for erasure.
Read DQ[7:0]
at Valid Address (Note 1)
DQ[6] Toggled
NO
(Note 3)
YES
PROGRAM/ERASE
COMPLETE
DQ[5] = 1
NO
YES
Read DQ[7:0]
at Valid Address (Note 1)
DQ[6] Toggled
(Note 2)
NO
YES
PROGRAM/ERASE
EXCEEDED TIME ERROR
Notes
:
1. During programming, the program address.
During sector erase, an address within any sector scheduled for erasure.
2. Recheck DQ[6] since toggling may stop at the same time as DQ[5] changes from 0 to 1.
3. Use this path if testing for Program/Erase status.
4. Use this path to test whether sector is in Erase Suspend mode.
Read DQ[7:0]
at Valid Address (Note 1)
START
Read DQ[7:0]
DQ[2] Toggled
NO
SECTOR BEING READ
IS IN ERASE SUSPEND
Read DQ[7:0]
YES
NO
(Note 4)
SECTOR BEING READ
IS NOT IN ERASE SUSPEND
Figure 8. Toggle Bit I and II Test Algorithm
Thus, both status bits are required for sector and
mode information.
Figure 8 illustrates the operation of Toggle Bits I
and II.
DQ[5] - Exceeded Timing Limits
DQ[5] is set to a
‘
1
’
when the program or erase
time has exceeded a specified internal pulse count
limit. This is a failure condition that indicates that
the program or erase cycle was not successfully
completed. DQ[5] status is valid only while DQ[7]
or DQ[6] indicate that an Automatic Algorithm is
in progress.
The DQ[5] failure condition will also be signaled if
the host tries to program a
‘
1
’
to a location that is
previously programmed to
‘
0
’
, since only an erase
operation can change a
‘
0
’
to a
‘
1
’
.
For both of these conditions, the host must issue
a Read/Reset command to return the device to
the Read mode.
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PDF描述 |
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| HY29F080G-12 | x8 Flash EEPROM |
| HY29F080T90 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080G-70 | x8 Flash EEPROM |
| HY29F080G-90 | x8 Flash EEPROM |
| HY29F080R-12 | x8 Flash EEPROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY29F080T-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 Flash EEPROM |
| HY29F080T-12E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F080T-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F080T-15E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F080T-15I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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