- 您現在的位置：買賣IC網 > PDF目錄385415 > HY29F400BG90 (Hynix Semiconductor Inc.) 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory PDF資料下載
參數資料
| 型號： | HY29F400BG90 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| 中文描述： | 4兆位（512Kx8/256Kx16）5伏只閃存 |
| 文件頁數： | 34/40頁 |
| 文件大小： | 509K |
| 代理商： | HY29F400BG90 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁當前第34頁第35頁第36頁第37頁第38頁第39頁第40頁
34
Rev. 5.2/May 01
HY29F400
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
r
e
t
m
a
r
a
P
C
E
D
E
J
d
t
S
t
V
A
V
A
t
C
W
i
e
y
C
e
W
t
L
E
V
A
t
S
A
u
S
s
s
e
r
d
A
t
X
A
L
E
t
H
A
d
H
s
s
e
r
d
A
t
H
E
V
D
t
S
D
i
p
u
S
a
D
t
X
D
H
E
t
H
D
m
i
d
H
a
D
t
L
E
H
G
t
L
E
H
G
y
v
o
c
e
R
d
a
e
R
t
L
E
L
W
t
S
W
i
p
u
S
#
E
W
t
H
W
H
E
t
H
W
i
d
H
#
E
W
t
H
E
L
E
t
P
C
W
e
s
P
#
E
C
t
L
E
H
E
t
H
P
C
W
e
s
P
#
E
C
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25
°
C, V
= 5.0 volts, 100,000 cycles. In addition,
programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-
tions of 90
°
C, V
= 4.5 volts (4.75 volts for 55 ns version), 100,000 cycles.
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
command. See Table 5 for further information on command sequences.
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes
are programmed to 0x00 before erasure.
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most
bytes program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the maximum
byte program time specified is exceeded. See Write Operation Status section for additional information.
n
o
p
c
s
e
D
n
o
p
0
7
0
7
O
-
d
e
5
5
e
5
5
p
-
S
t
U
5
4
5
4
-
0
9
0
9
-
e
m
p
i
m
e
1
n
n
n
n
n
n
n
n
n
n
p
y
T
a
M
y
T
a
M
y
T
a
M
y
T
a
M
y
T
a
M
y
T
a
M
y
T
n
M
n
M
M
M
M
M
M
M
M
M
M
M
s
s
s
s
s
s
s
s
s
s
s
s
s
s
n
n
n
n
n
n
n
n
n
n
μ
μ
μ
μ
e
s
e
s
e
s
e
s
e
s
e
s
e
s
e
s
e
y
e
y
s
n
e
m
e
i
m
e
0
5
5
4
2
5
5
4
2
5
0
4
3
5
5
4
4
0
0
0
0
e
W
e
r
B
e
m
i
e
m
e
m
h
h
0
3
0
3
5
3
5
4
h
g
0
7
0
2
1
0
5
6
8
1
1
3
1
8
1
8
0
0
0
0
1
0
3
2
t
1
H
W
H
W
t
1
H
W
H
W
n
o
r
p
O
g
n
m
m
a
r
o
r
P
3
,
,
e
d
o
M
e
B
x
0
3
d
e
r
o
W
M
d
p
x
p
x
p
x
p
x
p
x
p
0
n
o
r
p
O
g
n
m
m
a
r
o
r
P
p
C
5
,
,
,
e
d
o
M
e
B
c
c
c
c
c
c
c
c
d
e
r
o
W
M
d
3
t
2
H
W
H
W
t
2
H
W
H
W
n
o
r
p
O
e
s
a
r
E
r
e
S
4
,
,
t
3
H
W
H
W
t
3
H
W
H
W
n
o
r
p
O
e
s
a
r
E
p
C
4
,
,
1
8
e
c
n
a
r
d
n
E
e
y
C
m
a
r
o
r
P
d
n
a
e
s
a
r
E
0
0
0
0
0
s
s
c
c
0
3
t
Y
S
U
B
y
a
D
#
Y
B
/
Y
R
o
#
E
C
0
3
5
3
相關PDF資料 |
PDF描述 |
|---|---|
| HY29F400BG45 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BG55 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BT45 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400TG70 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY29F400BG-90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM |
| HY29F400BR45 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BR-45 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM |
| HY29F400BR55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BR-55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM |
發布緊急采購，3分鐘左右您將得到回復。