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參數(shù)資料

型號(hào)：	HY57V281620ELT-5
廠商：	HYNIX SEMICONDUCTOR INC
元件分類：	DRAM
英文描述：	128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
中文描述：	8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
封裝：	0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
文件頁(yè)數(shù)：	1/13頁(yè)
文件大小：	126K
代理商：	HY57V281620ELT-5

This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

use of circuits described. No patent licenses are implied.

Rev. 1.1 / J an. 2005

128Mb Synchronous DRAM based on 2M x 4Bank x16 I/ O

Document Title

4Bank x 2M x 16bits Synchronous DRAM

Revision History

Revision No.

History

Draft Date

Remark

1.0

First Version Release

Dec. 2004

1.1

1. Corrected PIN ASSIGNMENT A12 to NC

Jan. 2005

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HY57V281620ELT-6	128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
HY57V281620ELT-7	128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
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HY57V281620ET-7	128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
HY57V281620ET-H	128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
HY57V281620ELT-6	制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
HY57V281620ELT-7	制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
HY57V281620ELT-H	制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
HY57V281620ELTP-5	制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
HY57V281620ELTP-6	制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

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