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參數資料
| 型號： | HY57V281620ET-6 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| 中文描述： | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 126K |
| 代理商： | HY57V281620ET-6 |
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 1.1 / J an. 2005
1
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/ O
Document Title
4Bank x 2M x 16bits Synchronous DRAM
Revision History
Revision No.
History
Draft Date
Remark
1.0
First Version Release
Dec. 2004
1.1
1. Corrected PIN ASSIGNMENT A12 to NC
Jan. 2005
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HY57V281620ET-7 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ET-H | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ETP-5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ETP-6 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ETP-6DR-C | 制造商:SK Hynix Inc 功能描述: |
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