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參數(shù)資料
| 型號： | HYB511000BJ- |
| 廠商： | SIEMENS AG |
| 英文描述： | 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| 中文描述： | 1個M × 1位動態(tài)隨機存儲器的低功耗1個Mⅴ1位動態(tài)隨機存儲器 |
| 文件頁數(shù)： | 1/22頁 |
| 文件大?。?/td> | 192K |
| 代理商： | HYB511000BJ- |
Semiconductor Group
33
01.95
1 048 576 words by 1-bit organization
Fast access and cycle time
50 ns access time
95 ns cycle time (-50 version)
60 ns access time
130 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
Fast page mode cycle time
35 ns (-50 version)
40 ns (-60 version)
45 ns (-70 version)
Low power dissipation
max. 495 mW active (-50 version)
max. 440 mW active (-60 version)
max. 385 mW active (-70 version)
max. 5.5 mW standby
max. 1.1 mW standby for L-version
Ordering Information
Type
Ordering Code
Package
Description
HYB 511000BJ-50
Q67100-Q1056
P-SOJ-26/20-1
DRAM (access time 50 ns)
HYB 511000BJ-60
Q67100-Q518
P-SOJ-26/20-1
DRAM (access time 60 ns)
HYB 511000BJ-70
Q67100-Q519
P-SOJ-26/20-1
DRAM (access time 70 ns)
HYB 511000BJL-50
on request
P-SOJ-26/20-1
DRAM (access time 50 ns)
HYB 511000BJL-60
Q67100-Q526
P-SOJ-26/20-1
DRAM (access time 60 ns)
HYB 511000BJL-70
Q67100-Q527
P-SOJ-26/20-1
DRAM (access time 70 ns)
1 M
×
1-Bit Dynamic RAM
Low Power 1 M
×
1-Bit Dynamic RAM
Advanced Information
HYB 511000BJ-50/-60/-70
HYB 511000BJL-50/-60/-70
Single + 5 V (
±
10 %) supply with a built-in
V
BB
generator
Output unlatched at cycle end allows two-
dimensional chip selection
Common I/O capability using “early write”
operation
Read-modify-write, CAS-before-RAS
refresh, RAS-only refresh, hidden-refresh,
fast page mode capability and test mode
capability
All inputs, outputs and clocks
TTL-compatible
512 refresh cycles/8 ms
512 refresh cycles/64 ms
for L-version only
Plastic Packages:
P-SOJ-26/20-1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB511000BJL-70 | 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB5116400BJ-50 | 4M x 4-Bit Dynamic RAM |
| HYB5116400BJ-50- | 4M x 4-Bit Dynamic RAM |
| HYB5116400BJ-50-60 | Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:41; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:22-41 |
| HYB5116400BJ-60 | 4M x 4-Bit Dynamic RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB511000BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJ-80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Fast Page Mode DRAM |
| HYB511000BJL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
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