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參數資料
| 型號： | IFN5912 |
| 英文描述： | TRANSISTOR | JFET | N-CHANNEL | 7MA I(DSS) | TO-78 |
| 中文描述： | 晶體管|場效應| N溝道|為7mA我（直）|到78 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 65K |
| 代理商： | IFN5912 |
01/99
B-47
IFN5911, IFN5912
N-Channel Dual Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
50 mA
500 mW
4 mW/°C
– 65°C to 200°C
TOD78 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case,
5 Source, 6 Drain, 7 Gate, 8 Omitted
At 25°C free air temperature:
IFN5911
IFN5912
Process NJ30L or NJ36D
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
– 25
– 25
V
pA
nA
pA
nA
V
V
mA
I
G
= – 1 μA, V
DS
= V
V
GS
= – 15V, V
DS
= V
V
GS
= – 15V, V
DS
= V
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 1 nA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, V
GS
= V
Gate Reverse Current
I
GSS
– 100
– 250
– 100
– 100
– 5
– 4
40
– 100
– 250
– 100
– 100
– 5
– 4
40
T
A
= 150°C
Gate Operating Current
I
G
T
A
= 125°C
Gate Source Cutoff Voltage
Gate Source Voltage
Drain Saturation Current (Pulsed)
V
GS(OFF)
V
GS
I
DSS
– 1
– 0.3
7
– 1
– 0.3
7
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
g
fs
3000 10000 3000 10000
3000 10000 3000 10000
100
150
5
μS
μS
μS
μS
pF
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
f = 1 kHz
f = 100 MHz
f = 1 kHz
f = 100 MHz
f = 1 MHz
Common Source
Output Conductance
g
os
100
150
5
Common Source Input Capacitance
C
iss
Common Source
Reverse Transfer Capacitance
C
rss
1.2
1.2
pF
V
DG
= 10V, I
D
= 5 mA
f = 1 MHz
Equivalent Short Circuit
Input Noise Voltage
ˉ
N
20
20
nV/
√
Hz
V
DG
= 10V, I
D
= 5 mA
f = 10 kHz
Noise Figure
NF
1
1
dB
V
DG
= 10V, I
D
= 5 mA
R
G
= 100 K
V
DG
= 10V, I
D
= 5 mA
V
DS
= 10V, V
GS
= V
V
DG
= 10V, I
D
= 5 mA
f = 10 Hz
Differential Gate Current
Saturation Drain Current Ratio
Differential Gate Source Voltage
|
G1
|–|
G2
|
I
DSS1
/I
DSS2
0.95
V
GS1
– V
GS2
V
GS1
– V
GS2
T
20
1
10
20
1
15
nA
T
A
= 125°C
0.95
mV
20
40
μV/°C
V
DG
= 10V, I
D
= 5 mA
T
A
= 25°C
T
B
= 125°C
T
A
= – 55°C
T
B
= 25°C
f = 1 kHz
Gate Source Voltage
Differential Drift
V
GS1
– V
GS2
T
20
40
μV/°C
V
DG
= 10V, I
D
= 5 mA
Transconductance Ratio
g
fs1
/g
fs2
0.95
1
0.95
1
V
DG
= 10V, I
D
= 5 mA
￥ VHF Amplifiers
￥ Wideband Differential
Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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