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參數資料
| 型號： | IGD01N120H2 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HighSpeed 2-Technology |
| 中文描述： | 高速2 -技術 |
| 文件頁數： | 1/13頁 |
| 文件大?。?/td> | 390K |
| 代理商： | IGD01N120H2 |
IGP01N120H2,
IGD01N120H2
IGB01N120H2
Power Semiconductors
1
Rev. 2, Mar-04
HighSpeed 2-Technology
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
2
nd
generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
-
E
off
optimized for
I
C
=1A
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
G
E
off
T
j
Package
Ordering Code
IGP01N120H2
1200V
1A
0.09mJ
150
°
C
P-TO-220-3-1
Q67040-S4593
IGB01N120H2
1200V
1A
0.09mJ
150°C
P-TO-263 (D
2
PAK)
Q67040-S4592
IGD01N120H2
1200V
1A
0.09mJ
150°C
P-TO-252 (DPAK)
Q67040-S4591
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Triangular collector current
T
C
= 25
°
C,
f
= 140kHz
T
C
= 100
°
C,
f
= 140kHz
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
Gate-emitter voltage
V
CE
I
C
1200
3.2
1.3
V
A
I
Cpuls
-
3.5
3.5
V
GE
P
tot
±
20
28
V
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
W
T
j
,
T
stg
-
-40...+150
260
225 (for SMD)
°
C
C
E
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D2-PAK)
(TO-263AB)
P-TO-252-3-1 (D-PAK)
(TO-252AA)
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