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參數資料
| 型號： | IHW20N120R2 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Reverse Conducting IGBT with monolithic body diode |
| 中文描述： | 反向開展與IGBT的單片體二極管 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 375K |
| 代理商： | IHW20N120R2 |
Reverse Conducting IGBT with monolithic body diode
Features:
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
CE(sat)
Low EMI
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
Type
V
CE
I
C
IHW20N120R2
Soft Switching Series
Power Semiconductors
1
Rev. 1.2 May 06
V
CE(sat
),Tj=25°C
T
j,max
Marking
Package
IHW20N120R2
1200V
20A
1.55V
175
°
C
H20R1202
PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area (
V
CE
≤
1200V,
T
j
≤
175
°
C)
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Diode surge non repetitive current,
t
p
limited by
T
jmax
T
C
= 25
°
C,
t
p
= 10ms, sine halfwave
T
C
= 25
°
C,
t
p
≤
2.5μs, sine halfwave
T
C
= 100
°
C,
t
p
≤
2.5μs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (
t
p
< 5 ms)
V
CE
I
C
1200
40
20
V
A
I
Cpuls
-
60
60
I
F
40
20
I
Fpuls
I
FSM
30
50
130
120
V
GE
±
20
±
25
330
V
Power dissipation
T
C
= 25
°
C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
P
tot
T
j
T
stg
-
W
-40...+175
-55...+175
260
°
C
1
J-STD-020 and JESD-022
G
C
E
PG-TO-247-3-21
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IHW20N120R3 | 功能描述:IGBT 晶體管 IH SeriesRev Conduct IGBT Monolithic Body RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IHW20N120R3FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 40A 310W TO247-3 |
| IHW20N135R3 | 功能描述:IGBT 1350V 20A 310W TO247-3 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:TrenchStop™ 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IHW20N135R3FKSA1 | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IHW20T120 | 功能描述:IGBT 晶體管 LOW LOSS DuoPack 1200V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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