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參數資料
| 型號： | IHW30N120R |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT with monolithic body diode for soft switching Applications |
| 中文描述： | 與單片體二極管軟開關IGBT的應用 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 987K |
| 代理商： | IHW30N120R |
IHW30N120R
IGBT with monolithic body diode for soft switching Applications
Features:
Powerful monolithic Body Diode
Specified for
T
Jmax
= 175°C
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
CE(sat)
Low EMI
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Applications:
Inductive Cooking
Soft Switching Applications
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
Soft Switching Series
q
Power Semiconductors
1
Rev. 2.2 May 06
T
j,max
Marking
Package
IHW30N120R
1200V
30A
1.55V
175
°
C
H30R120
PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area (
V
CE
≤
1200V,
T
j
≤
175
°
C)
V
CE
I
C
1200
60
30
V
A
I
Cpuls
-
90
90
50
25
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Diode surge non repetitive current,
t
p
limited by
T
jmax
T
C
= 25
°
C,
t
p
= 10ms, sine halfwave
T
C
= 25
°
C,
t
p
≤
2.5μs, sine halfwave
T
C
= 100
°
C,
t
p
≤
2.5μs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (
t
p
< 5 ms)
I
F
I
Fpuls
I
FSM
75
50
130
120
V
GE
±
20
±
25
395
V
Power dissipation
T
C
= 25
°
C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
P
tot
T
j
T
stg
-
W
-40...+175
-55...+175
260
°
C
1
J-STD-020 and JESD-022
G
C
E
PG-TO-247-3-21
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IHW30N120R2 | 功能描述:IGBT 晶體管 REVERSE CONDUCT IGBT 1200V 30A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IHW30N120R2_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Soft Switching Series |
| IHW30N120R2FKSA1 | 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IHW30N120R3 | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IHW30N120R3FKSA1 | 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube |
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