型號: | IKB01N120H2 |
廠商: | INFINEON TECHNOLOGIES AG |
英文描述: | HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode |
中文描述: | 高速2技術與軟,恢復快反平行何快恢復二極管 |
文件頁數: | 1/14頁 |
文件大小: | 384K |
代理商: | IKB01N120H2 |
相關PDF資料 |
PDF描述 |
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IKB10N60T | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
IKP10N60T | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
IKB15N60T | IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
IKP01N120H2 | HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode |
IKP04N60T | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
相關代理商/技術參數 |
參數描述 |
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IKB01P-9/4 | 制造商:TE Connectivity 功能描述:LEGEND STRIP WHITE/YELLOW |
IKB01PW | 制造商:TE Connectivity 功能描述:IKC MARKER TYPE IKB 01 |
IKB02P-9/4 | 制造商:TE Connectivity 功能描述:LEGEND STRIP WHITE/YELLOW 制造商:TE Connectivity 功能描述:LEGEND STRIP, WHITE/YELLOW |
IKB02PW | 制造商:TE Connectivity 功能描述:IKC MARKER TYPE IKB 02, sheet of 240 |
IKB03N120H2 | 功能描述:IGBT 晶體管 HIGH SPEED 2 TECH 1200V 3A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |