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參數資料
型號: IKB01N120H2
廠商: INFINEON TECHNOLOGIES AG
英文描述: HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述: 高速2技術與軟,恢復快反平行何快恢復二極管
文件頁數: 1/14頁
文件大小: 384K
代理商: IKB01N120H2
IKB01N120H2
Power Semiconductors
1
Rev. 2.3 May 06
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
2
nd
generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
-
E
off
optimized for
I
C
=1A
Qualified according to JEDEC
2
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
E
off
T
j
Marking
Package
IKB01N120H2
1200V
1A
0.09mJ
150°C
K01H1202
P-TO-220-3-45
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Triangular collector current
T
C
= 25
°
C,
f
= 140kHz
T
C
= 100
°
C,
f
= 140kHz
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
1200V,
T
j
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Gate-emitter voltage
V
CE
I
C
1200
3.2
1.3
V
A
I
Cpuls
-
3.5
3.5
I
F
3.2
1.3
V
GE
P
tot
±
20
28
V
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
Soldering temperature (reflow soldering, MSL1)
W
T
j
,
T
stg
-
-40...+150
220
°
C
2
J-STD-020 and JESD-022
G
C
E
P-TO-220-3-45
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