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參數資料
| 型號： | IKW75N60T |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| 中文描述： | 低損耗DuoPack：在IGBT的溝槽場終止技術和軟，恢復快反平行何快恢復二極管 |
| 文件頁數： | 1/13頁 |
| 文件大?。?/td> | 409K |
| 代理商： | IKW75N60T |
Low Loss DuoPack : IGBT in Trench and Fieldstop
technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5
μ
s
Positive temperature coefficient in V
CE(sat)
very tight parameter distribution
high ruggedness, temperature stable behaviour
very high switching speed
Low EMI
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC
1)
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Applications:
Frequency Converters
Uninterrupted Power Supply
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
TrenchStop Series
IKW75N60T
q
Power Semiconductors
1
Rev. 2.4 May 06
T
j,max
Marking
Package
IKW75N60T
600V
75A
1.5V
175
°
C
K75T60
PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current, limited by
T
jmax
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area (
V
CE
≤
600V,
T
j
≤
175
°
C)
Diode forward current, limited by
T
jmax
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
3)
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V
CE
I
C
600
80
2)
75
V
A
I
Cpuls
-
225
225
I
F
80
2)
75
I
Fpuls
V
GE
t
SC
225
±
20
5
V
μ
s
P
tot
T
j
T
stg
-
428
W
-40...+175
-55...+175
260
°
C
1)
J-STD-020 and JESD-022
2)
Value limited by bondwire
3)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-247-3-21
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IKW75N60T_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology |
| IKW75N60TA | 功能描述:IGBT 晶體管 600V 75A 100nA RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IKW75N60TAFKSA1 | 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 80A 428W TO247-3 |
| IKW75N60TFKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 80A 428W TO247-3 |
| IKW75N60TXK | 制造商:Infineon Technologies AG 功能描述: |
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