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參數(shù)資料
型號: IL217AT
廠商: SIEMENS A G
元件分類: 光電耦合器
英文描述: PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
中文描述: 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
文件頁數(shù): 1/3頁
文件大小: 66K
代理商: IL217AT
Semiconductor Group 4–7
IL215AT/216AT/217AT
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
Package Dimensions in Inches (mm)
FEATURES
High Current Transfer Ratio, I
F
=1 mA
IL215AT, 20% Minimum
IL216AT, 50% Minimum
IL217AT, 100% Minimum
Isolation Voltage, 2500 VAC
RMS
Electrical Specifications Similar to
Standard 6 Pin Coupler
Industry Standard SOIC-8 Surface
Mountable Package
Standard Lead Spacing, .05"
Available in Tape and Reel (suffix T)
(Conforms to EIA Standard RS481A)
Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL215AT/216AT/217AT is an optically coupled
pair with a Gallium Arsenide infrared LED and a
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electrical
isolation between input and output. The IL215AT/
216AT/217AT comes in a standard SOIC-8 small
outline package for surface mounting which makes
it ideally suited for high density applications with
limited space. In addition to eliminating through-
holes requirements, this package conforms to
standards for surface mounted devices.
The high CTR at low input current is designed for
low power consumption requirements such as
CMOS microprocessor interfaces.
Maximum Ratings
Emitter
Peak Reverse Voltage............................................6.0 V
Continuous Forward Current ...............................60 mA
Power Dissipation at 25
°
C ..................................90 mW
Derate Linearly from 25
°
C ............................1.2 mW/
°
C
Detector
Collector-Emitter Breakdown Voltage.....................30 V
Emitter-Collector Breakdown Voltage.......................7 V
Collector-Base Breakdown Voltage........................70 V
Power Dissipation .............................................150 mW
Derate Linearly from 25
°
C ............................2.0 mW/
°
C
Package
Total Package Dissipation at 25
°
C Ambient
(LED + Detector)...........................................280 mW
Derate Linearly from 25
°
C ............................3.3 mW/
°
C
Storage Temperature..........................–55
°
C to +150
°
C
Operating Temperature ......................–55
°
C to +100
°
C
Soldering Time at 260
°
C.................................... 10 sec.
Characteristics
(T
A
=25
°
C)
Symbol Min. Typ.
Max. Unit
Condition
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector-Emitter
Dark Current
Collector-Emitter
Capacitance
Package
DC Current Transfer CTR
DC
V
F
I
R
C
O
1.0
0.1
25
1.5
100
V
μ
A
pF
I
F
=1 mA
V
R
=6.0 V
V
R
=0
BV
CEO
BV
ECO
30
7
V
V
I
C
=10
μ
A
I
E
=10
μ
A
V
CE
=10 V,
I
F
=0
I
CEOdark
5
50
nA
C
CE
10
pF
V
CE
=0
%
I
F
=1 mA
V
CE
=5 V
IL215AT
IL216AT
IL217AT
Collector-Emitter
Saturation Voltage V
CE sat
Isolation Test
Voltage
Capacitance,
Input to Output
Resistance,
Input to Output
Switching Time
20
50
100
50
80
130
I
C
=0.1 mA,
I
F
=1 mA
0.4
V
IO
2500
VAC
RMS
C
IO
0.5
pF
R
IO
t
ON
,
t
OFF
100
3.0
G
μ
s
I
C
=2 mA,
R
E
=100
,
V
CE
=10 V
Specifications subject to change.
TOLERANCE:
±
.005 (unless otherwise noted)
40
°
.240
(6.10)
.154
±
.005
(3.91
±
.13)
.050 (1.27)
typ.
.021 (.53)
.016 (.41)
.192
±
.005
(4.88
±
.13)
.004 (.10)
.008 (.20)
Lead
Coplanarity
±
.0015 (.04)
max.
.015
±
.002
(.38
±
.05)
.008 (.20)
7
°
.058
±
.005
(1.49
±
.13)
.125
±
.005
(3.18
±
.13)
Pin One ID
.120
±
.005
(3.05
±
.13)
C
5
°
max.
R.010
(.25) max.
.020
±
.004
(.15
±
.10)
2 plcs.
1
2
3
4
Anode
Cathode
NC
NC
8
7
6
5
NC
Base
Collector
Emitter
10.95
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