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參數(shù)資料
| 型號(hào)： | IMB16 |
| 英文描述： | TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | TSOP |
| 中文描述： | 晶體管| 50V五（巴西）總裁| 500mA的一（c）|的TSOP |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 19K |
| 代理商： | IMB16 |
IMB16
Transistors
General purpose (dual digital transistors)
IMB16
z
Features
1) Two DTB143X chips in a SMT package.
z
Equivalent circuit
R
1
R
2
R
2
R
1
(1)
(2)
(3)
(4)
(5)
(6)
z
External dimensions
(Units : mm)
IMB16
Each lead has same dimensions
ROHM : SMT6
(
(
(
0.3to0.6
0
0
1
0
0
(
2.8
1.6
1
2
0
0
(
(
z
Package, marking, and packaging specifications
Type
Package
Marking
Code
IMB16
SMT6
B16
T110
3000
Basic ordering unit (pieces)
z
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
200mW per element must not be exceeded.
Symbol
V
CC
V
IN
I
O
Pd
Tj
Tstg
Limits
50
30
7
500
300(TOTAL)
150
50
~
+
150
Unit
V
V
mA
mW
°
C
°
C
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
z
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
V
I (off)
V
I (on)
V
O (on)
I
I
I
O (off)
G
I
f
T
Min.
2.5
56
Typ.
200
Max.
0.3
0.3
1.8
0.5
Unit
Conditions
Resistance ratio
1
2
Measured using pulse current.
R
1
R
2
/
R
1
3.29
1.7
4.7
2.1
6.11
2.6
V
V
mA
μ
A
MHz
k
V
CC
=
5V, I
O
=
100
μ
A
V
O
=
0.3V, I
O
=
20mA
I
O
/I
I
=
50mA/
2.5mA
V
I
=
5V
V
CC
=
50V, V
I
=
0V
I
O
=
50mA, V
O
=
5V
V
CE
=
10V, I
E
=
50mA, f
=
100MHz
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
1
2
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