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參數(shù)資料
| 型號： | IPB10N03L |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:Red; Approval Bodies:UL; Approval Categories:UL AWM Style 1213; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes |
| 中文描述： | 的OptiMOS降壓轉(zhuǎn)換器系列 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 452K |
| 代理商： | IPB10N03L |
2003-01-17
Page 1
IPP10N03L
IPB10N03L
Opti
MOS
a
Buck converter series
Product Summary
V
DS
R
DS(on)
max. SMD version
I
D
30
8.9
73
V
m
A
Feature
N-Channel
Logic Level
Low On-Resistance
R
DS(on)
Excellent Gate Charge x
R
DS(on)
product (FOM)
Superior thermal resistance
175°C operating temperature
Avalanche rated
d
v
/d
t
rated
Ideal for fast switching buck converters
P- TO263 -3-2
P- TO220 -3-1
Marking
10N03L
10N03L
Type
IPP10N03L
Package
P- TO220 -3-1
Ordering Code
Q67042-S4040
IPB10N03L
P- TO263 -3-2
Q67040-S4346
Maximum Ratings
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Value
73
63
Unit
A
T
C
=25°C
Pulsed drain current
T
C
=25°C
Avalanche energy, single pulse
I
D puls
292
I
D
=30A,
V
DD
=25V,
R
GS
=25
Repetitive avalanche energy, limited by
T
jmax
2)
Reverse diode d
v
/d
t
E
AS
25
mJ
E
AR
d
v
/d
t
10
6
I
S
=73A,
V
DS
=24, d
i
/d
t
=200A/μs,
T
jmax
=175°C
Gate source voltage
Power dissipation
kV/μs
V
GS
P
tot
±20
107
V
W
T
C
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j ,
T
stg
-55... +175
55/175/56
°C
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| IPB10N03LB | 功能描述:MOSFET N-CH 30V 50A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:OptiMOS™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IPB10N03LB G | 功能描述:MOSFET N-CH 30V 50A D2PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:OptiMOS™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IPB10N03LBG | 功能描述:MOSFET N-Channel MOSFET 20-200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| IPB10N03LBNT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-263 |
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