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參數資料
| 型號： | IPDH6N03LAG |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶體管 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 428K |
| 代理商： | IPDH6N03LAG |
IPDH6N03LA G IPFH6N03LA G
IPSH6N03LA G IPUH6N03LA G
Opti
MOS
2 Power-Transistor
Features
Ideal for high-frequency dc/dc converters
Qualified according to JEDEC
1)
for target application
N-channel, logic level
Excellent gate charge x
R
DS(on)
product (FOM)
Superior thermal resistance
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
2)
50
A
T
C
=100 °C
50
Pulsed drain current
I
D,pulse
T
C
=25 °C
3)
350
Avalanche energy, single pulse
E
AS
I
D
=50 A,
R
GS
=25
150
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=50 A,
V
DS
=20 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
4)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
71
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V
DS
25
V
R
DS(on),max
(SMD version)
6
m
I
D
50
A
Product Summary
Type
IPDH6N03LA G
IPFH6N03LA G
IPSH6N03LA G
IPUH6N03LA G
Package
PG-TO252-3-11
PG-TO252-3-23
PG-TO251-3-11
PG-TO251-3-1
Marking
H6N03LA
H6N03LA
H6N03LA
H6N03LA
Rev. 1.3
page 1
2006-05-11
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