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參數資料
| 型號： | IPI100N06S3-03 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢-T Power-Transistor |
| 中文描述： | ㈢的OptiMOS - T的功率晶體管 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 170K |
| 代理商： | IPI100N06S3-03 |
IPB100N06S3-03
IPI100N06S3-03, IPP100N06S3-03
Opti
MOS
-T
Power-Transistor
Features
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
100% Avalanche tested
ESD Class 3 (HBM)
EIA/JESD22-A114-B
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Unit
Continuous drain current
1)
I
D
T
C
=25 °C,
V
GS
=10 V
100
A
T
C
=100 °C,
V
GS
=10 V
2)
100
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
400
Avalanche energy, single pulse
3)
E
AS
I
D
=50 A
690
mJ
Drain gate voltage
2)
V
DG
55
V
Gate source voltage
4)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
300
W
Operating and storage temperature
T
j
,
T
stg
-55 ... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V
DS
55
V
R
DS(on),max
(SMD version)
3.0
m
I
D
100
A
Product Summary
PG-TO220-3-1
PG-TO262-3-1
PG-TO263-3-2
Type
Package
Ordering Code
Marking
IPB100N06S3-03
PG-TO263-3-2
SP0000-87982
3PN0603
IPI100N06S3-03
PG-TO262-3-1
SP0000-87992
3PN0603
IPP100N06S3-03
PG-TO220-3-1
SP0000-87980
3PN0603
Rev. 1.0
page 1
2005-09-16
相關PDF資料 |
PDF描述 |
|---|---|
| IPB100N06S3L-03 | OptiMOS㈢-T Power-Transistor |
| IPI100N06S3L-03 | OptiMOS㈢-T Power-Transistor |
| IPB100N08S2-07 | OptiMOS㈢ Power-Transistor |
| IPI100N08S2-07 | OptiMOS㈢ Power-Transistor |
| IPB100N08S2L-07 | OptiMOS㈢ Power-Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IPI100N06S303XK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 100A 3-Pin(3+Tab) TO-262 |
| IPI100N06S3-04 | 功能描述:MOSFET OptiMOS-T2 PWR TRANS 55V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IPI100N06S304XK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 100A 3-Pin(3+Tab) TO-262 |
| IPI100N06S3L-03 | 功能描述:MOSFET N-CH 55V100A 2.7mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IPI100N06S3L03XK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 100A 3-Pin(3+Tab) TO-262 |
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