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參數(shù)資料
| 型號： | IPS032G |
| 廠商： | International Rectifier |
| 英文描述： | SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH |
| 中文描述： | 單/雙充分保護(hù)功率MOSFET開關(guān) |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 138K |
| 代理商： | IPS032G |
Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
IPS031G/IPS032G
SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD 60151-J
Description
The IPS031G/IPS032G are fully protected single/dual
low side SMART POWER MOSFETs that feature over-
current, over-temperature, ESD protection and drain
to source active clamp.These devices combine a
HEXFET POWER MOSFET and a gate driver. They
offer full protection and high reliability required in
harsh environments. The driver allows short switch-
ing times and provides efficient protection by turning
off the power MOSFET when the temperature ex-
ceeds 165
o
C or when the drain current reaches 12A.
The device restarts once the input is cycled. The
avalanche capability is significantly enhanced by the
active clamp and covers most inductive load demag-
netizations.
Typical Connection
Product Summary
R
ds(on)
70m
(max)
V
clamp
50V
Ishutdown
12A
T
on
/T
off
1.5
μ
s
Load
D
S
control
IN
R in series
(if needed)
Logic signal
www.irf.com
1
Packages
8-Lead SOIC
IPS031G
16-Lead SOIC
IPS032G
(Dual)
(Refer to lead assignment for correct pin assignment)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IPS031S | FULLY PROTECTED POWER MOSFET SWITCH |
| IPS031 | FULLY PROTECTED POWER MOSFET SWITCH |
| IPS03N03LA | Ideal for high-frequency dc/dc converters Qualified according to JEDEC for target applications |
| IPS042G | DUAL FULLY PROTECTED POWER MOSFET SWITCH |
| IPS05N03LA | RESISTOR CER 7.5K OHM 5W RADIAL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IPS03N03LA | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Ideal for high-frequency dc/dc converters Qualified according to JEDEC for target applications |
| IPS03N03LA G | 功能描述:MOSFET N-CH 25V 90A IPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:OptiMOS™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IPS03N03LAG | 功能描述:MOSFET N-KANAL POWER MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IPS03N03LAGXK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 90A 3-Pin(3+Tab) TO-251 |
| IPS03N03LB G | 功能描述:MOSFET N-CH 30V 90A IPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:OptiMOS™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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