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參數資料
| 型號： | IPS042G |
| 廠商： | International Rectifier |
| 英文描述： | DUAL FULLY PROTECTED POWER MOSFET SWITCH |
| 中文描述： | 雙充分保護功率MOSFET開關 |
| 文件頁數： | 1/10頁 |
| 文件大?。?/td> | 92K |
| 代理商： | IPS042G |
Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
IPS042G
DUAL FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD 60153-J
Description
The IPS042G is a fully protected dual low side SMART
POWER MOSFET that features over-current, over-tem-
perature, ESD protection and drain to source active
clamp.This device combines a HEXFET POWER
MOSFET and a gate driver. It offers full protection
and high reliability required in harsh environments.
The driver allows short switching times and provides
efficient protection by turning OFF the power MOSFET
when the temperature exceeds 165
o
C or when the
drain current reaches 2A. This device restarts once
the input is cycled. The avalanche capability is
significantly enhanced by the active clamp and cov-
ers most inductive load demagnetizations.
Package
Product Summary
R
ds(on)
500m
(max)
V
clamp
50V
I
shutdown
2A
T
on
/T
off
1.5
μ
s
8-Lead SOIC
www.irf.com
1
Typical Connection
Load
D
S
control
IN
R in series
(if needed)
Logic signal
(Refer to lead assignment for correct pin configuration)
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相關代理商/技術參數 |
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|---|---|
| IPS042GPBF | 制造商:International Rectifier 功能描述:MOSFET SMART SWITCH SO-8 |
| IPS042GTR | 功能描述:功率驅動器IC Dual PWR FET Swich 500mOhm 50V 2A RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IPS04N03LA | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor |
| IPS04N03LA G | 功能描述:MOSFET N-CH 25V 50A IPAK RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:OptiMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IPS04N03LAG | 功能描述:MOSFET N-KANAL POWER MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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