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參數資料
| 型號： | IRCZ24 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 0.040ohm，身份證\u003d 26A條） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 145K |
| 代理商： | IRCZ24 |
C-1
IRCZ24
PD - 9.615A
l
Dynamic dv/dt Rating
l
Current Sense
l
175°C Operating Temperature
l
Fast Switching
l
Ease of Paralleling
l
Simple Drive Requirements
HEXFET
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 0.040
I
D
= 26A
Description
Third Generation HEXFETs from International Rectifier provide the designer with
the best combination of fast switching, ruggedized device, low on-resistance and
cost-effectiveness.
The HEXSence device provides an accurate fraction of the drain current through
the additional two leads to be used for control or protection of the device. These
devices exhibit similar electrical and thermal characteristics as their IRF-series
equivalent part numbers. The provision of a kelvin source connection effectively
eliminates problems of common source inductance when the HEXSence is
used as a fast, high-current switch in non current-sensing applications.
Absolute Maximum Ratings
Parameter
Max.
17
12
68
60
0.40
±20
6.0
4.5
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or screw
W
W/°C
V
mJ
A
V
GS
E
AS
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case)
10 lbfin (1.1 Nm)
A
°C
Parameter
Min.
—
—
—
Max.
—
0.50
—
Units
2.5
—
62
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Thermal Resistance
** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994.
°C/W
TO-220 HexSense
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRCZ24-007 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-220VAR |
| IRCZ24-008 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-220VAR |
| IRCZ24PBF | 功能描述:MOSFET N-Chan 55V 26 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRCZ34 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=60V, Rds(on)=0.050ohm, Id=30A) |
| IRCZ34-007 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 27A I(D) | TO-220VAR |
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