- 您現在的位置：買賣IC網 > PDF目錄377502 > IRF1104S (International Rectifier) HEXFET Power MOSFET PDF資料下載
參數資料
| 型號： | IRF1104S |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 208K |
| 代理商： | IRF1104S |
IRF1104S/L
HEXFET
Power MOSFET
PD -91845
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Surface Mount (IRF1104S)
l
Low-profile through-hole (IRF1104L)
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
Parameter
Typ.
–––
–––
Max.
0.9
62
Units
R
θ
JC
R
θ
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
Thermal Resistance
°C/W
Parameter
Max.
100
71
400
2.4
170
1.1
±20
350
60
17
5.0
-55 to + 175
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the owest possible on-resistance
in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRF1104L) is available for low-
profile applications.
D2
TO-262
S
D
G
11/20/98
1
V
DSS
= 40V
R
DS(on)
= 0.009
I
D
= 100A
相關PDF資料 |
PDF描述 |
|---|---|
| IRF1104 | Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A) |
| IRF1104LPBF | HEXFET Power MOSFET |
| IRF1104SPBF | HEXFET Power MOSFET |
| IRF1302PBF | LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 256; Supply Voltage: 1.2V; I/Os: 78; Grade: -3; Package: Lead-Free TQFP; Pins: 100; Temp.: AUTO |
| IRF130 | TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF1104SHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK |
| IRF1104SPBF | 制造商:International Rectifier 功能描述:MOSFET, 40V, 100A, 9 MOHM, 62 NC QG, D2-PAK 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 40V 100A 3PIN D2PAK - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N-Channel 40V 100A D2PAK |
| IRF1104STRL | 功能描述:MOSFET N-CH 40V 100A D2PAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF1104STRLPBF | 制造商:International Rectifier 功能描述:MOSFET, 40V, 100A, 9 MOHM, 62 NC QG, D2-PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 40V 100A 3PIN D2PAK - Tape and Reel |
| IRF1104STRR | 功能描述:MOSFET N-CH 40V 100A D2PAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
發布緊急采購，3分鐘左右您將得到回復。