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參數資料
| 型號： | IRF237 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數： | 1/7頁 |
| 文件大小： | 69K |
| 代理商： | IRF237 |
5-1
Semiconductor
Features
8.1A and 6.5A, 275V and 250V
r
DS(ON)
= 0.45
and 0.68
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
275V, 250V DC Rated - 120V AC Line System
Operation
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17413.
Symbol
Packaging
JEDEC TO-204AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF234
TO-204AA
IRF234
IRF235
TO-204AA
IRF235
IRF236
TO-204AA
IRF236
IRF237
TO-204AA
IRF237
NOTE: When ordering, include the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
January 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1997
File Number
2208.3
IRF234, IRF235,
IRF236, IRF237
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm,
N-Channel Power MOSFETs
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