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參數資料
| 型號： | IRF3000PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 139K |
| 代理商： | IRF3000PBF |
www.irf.com
1
09/20/04
IRF3000PbF
SMPS MOSFET
HEXFET Power MOSFET
High frequency DC-DC converters
Lead-Free
Benefits
Low Gate to Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Applications
Parameter
Max.
1.6
1.3
13
2.5
0.02
± 30
8.9
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes
through
are on page 8
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
V
DSS
300V
R
DS(on)
max
0.40 @V
GS
= 10V
I
D
1.6A
Symbol
R
θ
JL
R
θ
JA
Parameter
Typ.
–––
–––
Max.
20
50
Units
Junction-to-Drain Lead
Junction-to-Ambient
°C/W
Thermal Resistance
相關PDF資料 |
PDF描述 |
|---|---|
| IRF3007LPBF | HEXFET Power MOSFET |
| IRF3007SPBF | HEXFET Power MOSFET |
| IRF3202SPBF | Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.0 to 4.4; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| IRF3315LPbF | HEXFET Power MOSFET |
| IRF3315SPBF | HEXFET Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF3000TR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 300V 1.6A 8-Pin SOIC T/R |
| IRF3007 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE MOSFET |
| IRF3007L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:75V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
| IRF3007LPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF3007PBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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