- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384489 > IRF4905SPBF (International Rectifier) HEXFET Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | IRF4905SPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 368K |
| 代理商： | IRF4905SPBF |
www.irf.com
1
PD - 97034
HEXFET
Power MOSFET
Features of this design are a 150°C junction oper-
ating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of other
applications.
Description
O
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Some Parameters Are Differrent from
IRF4905S
Lead-Free
O
O
O
O
O
O
Features
IRF4905SPbF
IRF4905LPbF
V
DSS
= -55V
R
DS(on)
= 20m
I
D
= -42A
D
2
Pak
IRF4905SPbF
TO-262
IRF4905LPbF
S
D
G
D
S
D
G
D
G
D
S
Gate
Drain
Source
S
D
G
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
A
W
W/°C
V
mJ
A
mJ
°C
Parameter
Typ.
–––
–––
Max.
0.75
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB Mount, steady state)
-55 to + 150
300 (1.6mm from case )
10 lbf in (1.1N m)
170
1.3
± 20
140
Max.
-70
-44
-42
-280
790
See Fig.12a, 12b, 15, 16
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF4905 | Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) |
| IRF510SPBF | HEXFET Power MOSFET |
| IRF520 | 9.2A, 100V, 0.270 Ohm,, N-Channel Power MOSFET(9.2A, 100V, 0.270 Ω,N溝道增強型功率MOS場效應(yīng)管) |
| IRF530 | 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET(14A, 100V, 0.160 Ohm,N溝道增強型功率MOS場效應(yīng)管) |
| IRF540N | 30V N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF4905STRL | 制造商:International Rectifier 功能描述: |
| IRF4905STRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 74A 3-Pin(2+Tab) D2PAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 55V 74A 3PIN D2PAK - Tape and Reel |
| IRF4905STRLPBF | 功能描述:MOSFET MOSFT PCh -55V -74A 20mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF4905STRLPBF-CUT TAPE | 制造商:IR 功能描述:Single P-Channel 55 V 3.8 W 180 nC Hexfet Power Mosfet Surface Mount - D2PAK-3 |
| IRF4905STRLPBF-EL | 制造商:International Rectifier 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。