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參數資料
| 型號： | IRF520 |
| 廠商： | Supertex, Inc. |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs |
| 中文描述： | ? -通道增強型立式DMOS功率場效應管 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 185K |
| 代理商： | IRF520 |
IRF520NS/L
HEXFET
Power MOSFET
PD -91340A
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF520NL) is available for low-profile applications.
S
D
G
Description
5/13/98
Parameter
Typ.
–––
–––
Max.
3.1
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Thermal Resistance
°C/W
Parameter
Max.
9.7
6.8
38
3.8
48
0.32
± 20
91
5.7
4.8
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
l
Advanced Process Technology
l
Surface Mount (IRF520NS)
l
Low-profile through-hole (IRF520NL)
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
D2
TO-262
V
DSS
= 100V
R
DS(on)
= 0.20
I
D
= 9.7A
相關PDF資料 |
PDF描述 |
|---|---|
| IRF520N | Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) |
| IRF520PBF | HEXFET Power MOSFET |
| IRF520VPBF | HEXFET㈢ Power MOSFET |
| IRF520V | Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A) |
| IRF5210L | Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF520_R4941 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF520A | 功能描述:MOSFET 9.2A 100V .4 OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF520CHIP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.2A I(D) | CHIP |
| IRF520FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| IRF520L | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A) |
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