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參數資料
| 型號： | IRF540FI |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET |
| 中文描述： | ? - CHANNEL100V - 00.50ohm - 30A條- TO-220/TO-220FI的功率MOSFET |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 86K |
| 代理商： | IRF540FI |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF540, IRF540S
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’
technology
Low on-state resistance
Fast switching
Low thermal resistance
V
DSS
= 100 V
I
D
= 23 A
R
DS(ON)
≤
77 m
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’
trench
’ technology.
Applications:-
d.c. to d.c. converters
switched mode power supplies
T.V. and computer monitor power supplies
The IRF540 is supplied in the SOT78 (TO220AB) conventional leaded package.
The IRF540S is supplied in the SOT404 (D
2
PAK) surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D
2
PAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
±
20
23
16
92
100
175
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
d
g
s
1
3
tab
2
1 2 3
tab
1
It is not possible to make connection to pin:2 of the SOT404 package
August 1999
1
Rev 1.100
相關PDF資料 |
PDF描述 |
|---|---|
| IRF540 | N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET |
| IRF540NPBF | HEXFET Power MOSFET |
| IRF540 | HEXFET POWER MOSFET |
| IRF540NL | Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A) |
| IRF540NS | Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF540L | 功能描述:MOSFET N-CH 100V 28A TO-262 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF540N | 制造商:International Rectifier 功能描述:MOSFET N TO-220 |
| IRF540N_R4942 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF540N-010HR | 制造商:International Rectifier 功能描述:HI-REL DISCRETE - Rail/Tube |
| IRF540NHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 33A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 33A 3PIN TO-220AB - Rail/Tube |
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