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參數資料
| 型號： | IRF5851 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss = +-20 V) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d -20五） |
| 文件頁數： | 1/14頁 |
| 文件大小： | 172K |
| 代理商： | IRF5851 |
Max.
N-Channel
20
2.7
2.2
11
P-Channel
-20
-2.2
-1.7
-9.0
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
0.96
0.62
7.7
± 12
W
mW/°C
V
°C
V
GS
T
J,
T
STG
N-Ch P-Ch
V
DSS
20V
-20V
R
DS(on)
0.090
0.135
HEXFET
Power MOSFET
2/26/02
IRF5851
Description
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
Parameter
Typ.
–––
Max.
130
Units
°C/W
R
θ
JA
www.irf.com
Maximum Junction-to-Ambient
Thermal Resistance
1
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two die
per package, the IRF5851 can provide the functionality of
two SOT-23 packages in a smaller footprint. Its unique
thermal design and R
DS(on)
reduction enables an
increase in current-handling capability.
Absolute Maximum Ratings
-55 to + 150
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
TSOP-6
PD-93998A
3
2
1
G2
G1
S2
S1
4
5
6
D2
D1
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|---|---|
| IRF5852 | Power MOSFET(Vdss=20V) |
| IRF5EA1310 | POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.036ohm, Id=23A) |
| IRF5NJZ48 | POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.016ohm, Id=22A*) |
| IRF5Y3315CM | Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes |
| IRF5Y5305CM | POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-18A*) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF5851PBF | 制造商:International Rectifier 功能描述:MOSFET Dual N/P-Ch 20V 2.7A/2.2A TSOP6 |
| IRF5851TR | 功能描述:MOSFET N+P 20V 2.7A 6-TSOP RoHS:否 類別:分離式半導體產品 >> FET - 陣列 系列:HEXFET® 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續漏極(Id) @ 25° C:3A 開態Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| IRF5851TRPBF | 功能描述:MOSFET MOSFT DUAL N/PCh 20V 2.7A Micro 6 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF5851TRPBF | 制造商:International Rectifier 功能描述:Transistor Polarity:Dual N/P Channel |
| IRF5852 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=20V) |
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