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參數資料
| 型號： | IRF6100 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 234K |
| 代理商： | IRF6100 |
HEXFET
Power MOSFET
R
DS(on)
max
0.065
@V
GS
= -4.5V
0.095
@V
GS
= -2.5V
IRF6100
Parameter
Max.
-20
±5.1
±3.5
±35
2.2
1.4
17
± 12
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
mW/°C
V
°C
V
GS
T
J,
T
STG
-55 to + 150
Absolute Maximum Ratings
W
www.irf.com
1
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques, and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design , that International Rectifier
is well known for,
provides the designer with an ex-
tremely efficient and reliable device.
The FlipFET
package, is one-third the footprint of a
comparable SOT-23 package and has a profile of less
than .8mm. Combined with the low thermal resistance of
the die level device, this makes the FlipFET
the best
device for application where printed circuit board space is
at a premium and in extremely thin application environ-
ments such as battery packs, cell phones and PCMCIA
cards.
Description
Ultra Low
R
DS(on)
per Footprint Area
Low
Thermal Resistance
P-Channel MOSFET
One-third Footprint of SOT-23
Super Low Profile (<.8mm)
Available Tested on Tape & Reel
FlipFET
ISOMETRIC
Symbol
R
θ
JA
R
θ
J-PCB
Parameter
Typ.
Max.
56.5
–––
Units
°C/W
Junction-to-Ambient
Junction-to-PCB mounted
35
Thermal Resistance
5/2/05
V
DSS
-20V
I
D
-5.1A
-4.1A
S
D
G
PD - 93930E
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