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參數資料
| 型號： | IRF6607 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件頁數： | 1/11頁 |
| 文件大?。?/td> | 201K |
| 代理商： | IRF6607 |
www.irf.com
1
4/8/04
IRF6607
Notes
through are on page 11
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with existing Surface
Mount Techniques
Description
The IRF6607 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging
to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the
manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in
power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6607 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6607 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The
IRF6607 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
A
= 70°C
Power Dissipation
P
D
@T
C
= 25°C
Power Dissipation
Linear Derating Factor
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
R
θ
JA
Junction-to-Ambient
R
θ
JA
Junction-to-Ambient
R
θ
JA
Junction-to-Ambient
R
θ
JC
Junction-to-Case
R
θ
J-PCB
Junction-to-PCB Mounted
HEXFET Power MOSFET
R
DS(on)
max
3.3m
@V
GS
= 10V
4.4m
@V
GS
= 4.5V
DirectFET
ISOMETRIC
V
DSS
30V
Qg(typ.)
50nC
SQ
SX
ST
MQ
MX
MT
Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details)
Units
V
A
W
W/°C
°C
Typ.
–––
12.5
20
–––
–––
Max.
35
–––
–––
3.0
1.0
Units
°C/W
-40 to + 150
3.6
2.3
42
0.029
Max.
30
27
22
220
±12
94
相關PDF資料 |
PDF描述 |
|---|---|
| IRF6607TR1 | Power MOSFET |
| IRF6608 | lHEXFET Power MOSFET |
| IRF6611 | DirectFET Power MOSFET |
| IRF6612 | HEXFET Power MOSFET |
| IRF6612TR1 | HEXFET Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF6607TR1 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6608 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6608TR1 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6609 | 功能描述:MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6609TR1 | 功能描述:MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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