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參數資料
| 型號： | IRF6608 |
| 廠商： | International Rectifier |
| 英文描述： | lHEXFET Power MOSFET |
| 中文描述： | lHEXFET功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 178K |
| 代理商： | IRF6608 |
www.irf.com
1
3/31/04
IRF6608
HEXFET Power MOSFET
R
DS(on)
max
9.0m
@V
GS
= 10V
11m
@V
GS
= 4.5V
Notes
through are on page 2
DirectFET
ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)
SQ
SX
ST
MQ
MX
MT
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Description
The IRF6608 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to
achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and
processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous
best thermal resistance by 80%.
The IRF6608 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest
generation of processors operating at higher frequencies. The IRF6608 has been optimized for parameters that are critical in
synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6608 has been
optimized for parameters that are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in
the control FET socke
t.
Absolute Maximum Ratings
Parameter
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
A
= 70°C
Power Dissipation
P
D
@T
C
= 25°C
Power Dissipation
Linear Derating Factor
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
R
θ
JA
Junction-to-Ambient
R
θ
JA
Junction-to-Ambient
R
θ
JA
Junction-to-Ambient
R
θ
JC
Junction-to-Case
R
θ
J-PCB
Junction-to-PCB Mounted
V
DSS
30V
Qg
16nC
Units
V
A
W
W/°C
°C
Typ.
–––
12.5
20
–––
1.0
Max.
58
–––
–––
3.0
–––
Units
°C/W
Max.
30
13
10
100
2.1
1.4
42
±12
55
-40 to + 150
0.017
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF6608TR1 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6609 | 功能描述:MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6609TR1 | 功能描述:MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6609TR1PBF | 功能描述:MOSFET 20V N-CH HEXFET 2mOhms 46nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6609TR1PBF | 制造商:International Rectifier 功能描述:MOSFET 制造商:International Rectifier 功能描述:N CH MOSFET, 20V, 25A, DIRECTFET MT |
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