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參數資料
| 型號： | IRF6678 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁數： | 1/9頁 |
| 文件大小： | 256K |
| 代理商： | IRF6678 |
Power MOSFET
d
Typical values (unless otherwise specified)
V
DSS
V
GS
R
DS(on)
30V max
±20V max
1.7m
@ 10V
Q
g tot
Q
gd
Q
gs2
43nC
15nC
4.0nC
Description
The IRF6678 combines the latest HEXFET power MOSFET silicon technology with advanced DirectFET
TM
packaging to achieve the lowest
on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6678 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6678 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
bus converters including R
DS(on)
and gate charge to minimize losses in the SyncFET socke
t.
PD - 96979B
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
c
SQ
SX
ST
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Typical On-Resistance vs. Gate Voltage
z
Low Profile (<0.7 mm)
z
Dual Sided Cooling Compatible
c
z
Ultra Low Package Inductance
z
Optimized for High Frequency Switching
c
z
Ideal for CPU Core DC-DC Converters
z
Optimized for for SyncFET Socket of Sync. Buck Converter
c
z
Low Conduction and Switching Losses
z
Compatible with Existing Surface Mount Techniques
c
c
Click on this section to link to the appropriate technical paper.
d
Click on this section to link to the DirectFET MOSFETs.
e
Repetitive rating; pulse width limited by max. junction temperature.
f
Starting T
J
= 25°C, L = 0.75mH, R
G
= 25
, I
AS
= 23A.
h
Surface mounted on 1 in. square Cu board, steady state.
k
T
C
measured with thermocouple mounted to top (Drain) of part.
Notes:
MQ
MX
MT
DirectFET
ISOMETRIC
MX
0
10
20
30
40
50
60
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VG
VDS= 24V
VDS= 15V
ID= 23A
R
DS(on)
2.3m
@ 4.5V
Q
oss
V
gs(th)
28nC
Q
rr
46nC
1.8V
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
h
Continuous Drain Current, V
GS
@ 10V
h
Continuous Drain Current, V
GS
@ 10V
k
Pulsed Drain Current
e
Single Pulse Avalanche Energy
f
Avalanche Current
e
A
mJ
A
Max.
30
24
150
240
210
24
±20
30
0
1
2
3
4
5
6
7
8
9
10
VGS, Gate -to -Source Voltage (V)
0
5
10
15
20
TD
)
ID = 29A
TJ = 25°C
TJ = 125°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF6678PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6678TR1 | 功能描述:MOSFET 30V N-CH HEXFET 2.2mOhms 43nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6678TR1PBF | 功能描述:MOSFET 30V N-CH HEXFET 2.2mOhms 43nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6678TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6678TRPBF | 功能描述:MOSFET 30V N-CH HEXFET 2.2mOhms 43nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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