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參數資料
| 型號： | IRF6691 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET plus Schottky Diode |
| 中文描述： | HEXFET功率MOSFET的加肖特基二極管 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 228K |
| 代理商： | IRF6691 |
www.irf.com
1
11/3/04
IRF6691
HEXFET Power MOSFET plus Schottky Diode
V
DSS
R
DS(on)
max
20V
2.5m
@V
GS
= 4.5V
1.8m
@V
GS
= 10V
Notes
through are on page 10
DirectFET
ISOMETRIC
Application Specific MOSFETs
Integrates Monolithic Trench Schottky Diode
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Reverse Recovery Losses
Low Switching Losses
Low Reverse Recovery Charge and Low Vf
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Description
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Absolute Maximum Ratings
8 ,, 79
8
73
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Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
Qg(typ.)
47nC
Parameter
Units
V
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
A
W
W/°C
°C
T
J
T
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JC
R
θ
J-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
°C/W
-40 to + 150
2.8
1.8
89
0.022
Max.
20
32
26
260
±12
180
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF6691TR1 | 功能描述:MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6691TR1PBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6691TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6691TRPBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6691TRPBF-EL | 制造商:International Rectifier 功能描述: |
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