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參數資料
| 型號： | IRF6727MPBF |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁數： | 1/9頁 |
| 文件大小： | 259K |
| 代理商： | IRF6727MPBF |
www.irf.com
1
08/14/07
IRF6727MPbF
IRF6727MTRPbF
DirectFET
Power MOSFET
Description
The IRF6727MPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6727MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6727MPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses
.
Absolute Maximum Ratings
Parameter
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Typical Total Gate Charge vs. Gate-to-Source Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.77mH, R
G
= 25
, I
AS
= 25A.
DirectFET
ISOMETRIC
RoHS Compliant Containing No Lead and Bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for both Sync.FET and some Control FET
application
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
100% Rg tested
MQ
MX
MT
MP
0
5
10
15
20
VGS, Gate -to -Source Voltage (V)
0
1
2
3
4
T
)
ID = 32A
TJ = 25°C
TJ = 125°C
Q
g tot
49nC
Q
gd
16nC
Q
gs2
5.3nC
Q
rr
45nC
Q
oss
V
gs(th)
28nC
1.8V
Units
V
A
mJ
A
25
Max.
30
26
180
260
250
±20
32
0
5
10
15
20
25
30
35
40
45
50
55
QG, Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
VG
VDS= 24V
VDS= 15V
ID= 25A
V
DSS
30V max
V
GS
R
DS(on)
R
DS(on)
±20V max 1.22m
@ 10V 1.84m
@ 4.5V
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF6727MPBF_09 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6727MTR1PBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 1.7mOhms 49nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6727MTRPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 1.7mOhms 49nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6727MTRPBF_09 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFETPower MOSFET |
| IRF6728MTR1PBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 2.5mOhms 28nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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