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參數(shù)資料
| 型號： | IRF6785MTRPBF |
| 廠商： | International Rectifier |
| 英文描述： | DIGITAL AUDIO MOSFET |
| 中文描述： | 數(shù)字音頻MOSFET的 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 614K |
| 代理商： | IRF6785MTRPBF |
www.irf.com
1
04/18/07
IRF6785MTRPbF
Key Parameters
Notes
through are on page 2
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SQ
SX
ST
SH
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6785MPbF device utilizes DirectFET
TM
packaging technology. DirectFET
TM
packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET
TM
package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFET
TM
package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
Features
Latest MOSFET Silicon technology
Key parameters optimized for Class-D audio amplifier
applications
Low R
DS(on)
for improved efficiency
Low Q
g
for better THD and improved efficiency
Low Q
rr
for better THD and lower EMI
Low package stray inductance for reduced ringing and lower
EMI
Can deliver up to 250W per channel into 8
Load in
Half-Bridge Configuration Amplifier
Dual sided cooling compatible
Compatible with existing surface mount technologies
RoHS compliant containing no lead or bromide
Lead-Free (Qualified up to 260°C Reflow)
DirectFET
ISOMETRIC
MQ
MX
MT
MN
MZ
V
DS
R
DS(on)
typ. @ V
GS
= 10V
Q
g
typ.
R
G(int)
max
200
85
26
3.0
V
m
nC
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
I
AR
A
W
mJ
A
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
T
J
T
STG
Thermal Resistance
Parameter
Typ.
Max.
Units
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JC
R
θ
J-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
–––
12.5
20
–––
1.4
45
–––
–––
1.4
–––
°C/W
57
2.8
1.8
33
8.4
Max.
200
± 20
3.4
2.7
27
19
-40 to + 150
0.022
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