- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385441 > IRF7233PBF (International Rectifier) HEXFET Power MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | IRF7233PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 171K |
| 代理商： | IRF7233PBF |
Parameter
Max.
-12
±9.5
±6.0
±76
2.5
1.6
0.02
60
± 12
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
W/°C
mJ
V
°C
E
AS
V
GS
T
J,
T
STG
-55 to + 150
11/9/04
IRF7233PbF
HEXFET Power MOSFET
Parameter
Max.
50
Units
°C/W
R
θ
JA
www.irf.com
Maximum Junction-to-Ambient
Thermal Resistance
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
V
DSS
= -12V
R
DS(on)
= 0.020
Description
1
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
SO-8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF7301PBF | HEXFET Power MOSFET |
| IRF7303QPBF | HEXFET Power MOSFET |
| IRF7304QPBF | HEXFET Power MOSFET |
| IRF7306PBF | HEXFET㈢Power MOSFET |
| IRF7306QPBF | HEXFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7233PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF7233TR | 功能描述:MOSFET P-CH 12V 9.5A 8-SOIC RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF7233TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 12V 9.5A 8-Pin SOIC T/R |
| IRF7233TRPBF | 功能描述:MOSFET MOSFT PCh -12V -9.5A 20mOhm 49nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF723FI | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2A I(D) | TO-220AB |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。