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參數資料
| 型號： | IRF730APBF |
| 廠商： | International Rectifier |
| 英文描述： | SMPS MOSFET |
| 中文描述： | MOSFET的開關電源 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 59K |
| 代理商： | IRF730APBF |
Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF730
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
High thermal cycling performance
Low thermal resistance
V
DSS
= 400 V
I
D
= 7.2 A
R
DS(ON)
≤
1
GENERAL DESCRIPTION
PINNING
SOT78 (TO220AB)
N-channel,
field-effect
intendedfor use in off-lineswitched
mode power supplies, T.V. and
computer monitor power supplies,
d.c.tod.c.converters,motorcontrol
circuits
and
general
switching applications.
enhancement
power
mode
PIN
DESCRIPTION
transistor,
1
gate
2
drain
purpose
3
source
tab
drain
The IRF730 is supplied in the
SOT78 (TO220AB) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
400
400
±
30
7.2
4.6
29
125
150
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 4.8 A;
t
p
= 0.23 ms; T
j
prior to avalanche = 25C;
V
≤
50 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig:17
MIN.
-
MAX.
290
UNIT
mJ
E
AR
Repetitive avalanche energy
1
I
= 7.2 A; t
= 2.5
μ
s; T
prior to
avalanche = 25C; R
GS
= 50
; V
GS
= 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
-
9.4
mJ
I
AS
, I
AR
-
7.2
A
d
g
s
1 2 3
tab
1
pulse width and repetition rate limited by T
j
max.
March 1999
1
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| IRF730 | FERRITE EMI SUPPRESSOR |
| IRF730 | N-Channel Power MOSFETs, 5.5A, 350 V/400V |
| IRF730B | 400V N-Channel MOSFET |
| IRF7434 | |
| IRF743FI | TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 4.5A I(D) | TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF730AS | 功能描述:MOSFET N-Chan 400V 5.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF730AS/LPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET (SMPS MOSFET) |
| IRF730ASL | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SMPS MOSFET |
| IRF730ASLPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET (SMPS MOSFET) |
| IRF730ASPBF | 功能描述:MOSFET N-Chan 400V 5.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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