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參數(shù)資料
| 型號： | IRF7324D1TR |
| 廠商： | International Rectifier |
| 英文描述： | FETKY MOSFET / Schottky Diode |
| 中文描述： | FETKY MOSFET的/肖特基二極管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 164K |
| 代理商： | IRF7324D1TR |
www.irf.com
1
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Maximum
-2.9
-2.3
-23
2.0
1.3
16
± 12
-5.0
-55 to +150
Units
A
Continuous Drain Current, V
GS
@4.5V
Pulsed Drain Current
Power Dissipation
W
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
mW/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
Thermal Resistance Ratings
IRF7324D1
PRELIMINARY
PD- 91789
FETKY
MOSFET / Schottky Diode
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
I
SD
≤
-2.2A, di/dt
≤
-50A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%
Surface mounted on FR-4 board, t
≤
10sec.
Parameter
R
θ
JA
Maximum
62.5
Units
°C/W
Junction-to-Ambient
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise noted)
The
FETKY
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
family of co-packaged HEXFETs and Schottky diodes offer
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
Description
V
DSS
= -20V
R
DS(on)
= 0.18
Schottky Vf = 0.39V
SO-8
TM
Top View
8
1
2
3
4
5
6
7
A
A
S
G
D
D
K
K
l
Co-packaged HEXFET
Power
MOSFET and Schottky Diode
l
Ideal for Mobile Phone Applications
l
Generation V Technology
l
SO-8 Footprint
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7324D1TRPBF | 功能描述:MOSFET MOSFT PCh w/Schttky -2.2A 270mOhm 5.2nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7324PBF | 功能描述:MOSFET DUAL -20V P-CH 12 VGS MAX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7324TR | 制造商:International Rectifier 功能描述:Dual P-Channel 20 V 2 W 42 nC Hexfet Power Mosfet Surface Mount - SOIC-8 |
| IRF7324TRPBF | 功能描述:MOSFET MOSFT DUAL PCh -20V 9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7325 | 功能描述:MOSFET 2P-CH 12V 7.8A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
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