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參數資料
| 型號： | IRF7341QTR |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 55V V(BR)DSS | 5.1A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的|配對| N溝道| 55V的五（巴西）直| 5.1AI（四）|蘇 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 184K |
| 代理商： | IRF7341QTR |
5/8/00
www.irf.com
1
IRF730AS/L
HEXFET
Power MOSFET
SMPS MOSFET
l
Switch Mode Power Supply (SMPS)
l
Uninterruptable Power Supply
l
High speed power switching
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Effective Coss Specified (See AN1001)
Applications
V
DSS
400V
Rds(on) max
1.0
I
D
5.5A
Typical SMPS Topologies:
l
Single Transistor Flyback Xfmr. Reset
l
Single Transistor Forward Xfmr. Reset
(Both US Line input only).
Parameter
Max.
5.5
3.5
22
74
0.6
± 30
4.6
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Absolute Maximum Ratings
PD-93772A
Notes
through
are on page 10
D2
TO-262
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF7341QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7341TR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 4.7A 8-Pin SOIC T/R |
| IRF7341TRPBF | 功能描述:MOSFET MOSFT DUAL NCh 55V 4.7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7341TRPBF-CUT TAPE | 制造商:IR 功能描述:Dual N-Channel 55 V 2 W 24 nC Hexfet Power Mosfet Surface Mount - SOIC-8 |
| IRF7342 | 功能描述:MOSFET 2P-CH 55V 3.4A 8-SOIC RoHS:否 類別:分離式半導體產品 >> FET - 陣列 系列:HEXFET® 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續漏極(Id) @ 25° C:3A 開態Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
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