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參數資料
| 型號： | IRF7473 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=100V, iD=6.9A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 100V的，身份\u003d 6.9A） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 196K |
| 代理商： | IRF7473 |
4/27/01
www.irf.com
1
IRF7473
HEXFET
Power MOSFET
l
Telecom and Data-Com 24 and 48V
input DC-DC converters
l
Motor Control
l
Uninterrutible Power Supply
Benefits
l
Ultra Low On-Resistance
l
High Speed Switching
l
Low Gate Drive Current Due to Improved
Gate Charge Characteristic
l
Improved Avalanche Ruggedness and
Dynamic dv/dt
l
Fully Characterized Avalanche Voltage
and Current
Typical SMPS Topologies
l
Full and Half Bridge 48V input Circuit
l
Forward 24V input Circuit
Applications
Parameter
Max.
6.9
5.5
55
2.5
0.02
± 20
5.8
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes
through
are on page 8
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
Symbol
R
θ
JL
R
θ
JA
Parameter
Typ.
–––
–––
Max.
20
50
Units
Junction-to-Drain Lead
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
100V
R
DS(on)
max
26
m
@V
GS
= 10V
I
D
6.9A
PD- 94037A
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| IRF7474PBF | HEXFET㈢Power MOSFET |
| IRF7474 | HEXFET Power MOSFET |
| IRF7475PBF | HEXFET Power MOSFET |
| IRF7476 | Power MOSFET(Vdss=12V, Id=15A) |
| IRF7478QPBF | SMPS MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF7473 | 制造商:International Rectifier 功能描述:MOSFET N SO-8 |
| IRF7473.PBF | 制造商:International Rectifier 功能描述:MOSFET N SO-8 制造商:International Rectifier 功能描述:MOSFET, N, SO-8 制造商:International Rectifier 功能描述:MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:100V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:2.5W ;RoHS Compliant: Yes |
| IRF7473PBF | 功能描述:MOSFET 100V 1 N-CH HEXFET 26mOhms 61nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7473TR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 6.9A 8-Pin SOIC T/R |
| IRF7473TRPBF | 功能描述:MOSFET MOSFT 100V 6.9A 26mOhm 61nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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