- 您現在的位置：買賣IC網 > PDF目錄377507 > IRF7726 (International Rectifier) Power MOSFET(Vdss=-30V) PDF資料下載
參數資料
| 型號： | IRF7726 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-30V) |
| 中文描述： | 功率MOSFET（30V的減振鋼板基本\u003d-） |
| 文件頁數： | 1/9頁 |
| 文件大小： | 95K |
| 代理商： | IRF7726 |
HEXFET
Power MOSFET
12/21/00
IRF7726
Absolute Maximum Ratings
www.irf.com
1
Thermal Resistance
Parameter
Max.
-30
-7.0
-5.7
-28
1.79
1.14
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Linear Derating Factor 0.01 W/°C
V
GS
Gate-to-Source Voltage
±20 V
T
J
, T
STG
Junction and Storage Temperature Range
Drain-Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
A
W
W
-55 to +150
°C
PD -94064
V
DSS
-30V
R
DS(on)
max
0.026@V
GS
= -10V
0.040@V
GS
= -4.5V
I
D
-
7.0A
-
6.0A
Parameter
Max.
70
Units
°
C/W
R
θ
JA
Maximum Junction-to-Ambient
MICRO-8
Description
HEXFET
Power MOSFETs from International Recti-
fier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the ruggedized device design,
that International Rectifier is well known for, provides
the designer with an extremely efficient and reliable
device for battery and load management.
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
The new Micro8 package, with half the footprint area
of the standard SO-8, provides the smallest footprint
available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.2mm)
of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards.
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
相關PDF資料 |
PDF描述 |
|---|---|
| IRF7751 | RES 8K-OHM 1% 0.125W 100PPM THICK-FILM SMD-0805 5K/REEL-7IN-PA |
| IRF7752 | Dual N-Channel MOSFET(雙 N溝道 MOS場效應管) |
| IRF7754 | Power MOSFET(Vdss=-12V) |
| IRF7755 | -20V,P-Channel HEXFET Power MOSFET(-20V,P溝道 HEXFET功率MOS場效應管) |
| IRF7757 | Power MOSFET(Vdss=20V) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF7726HR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 7A 8-Pin Micro |
| IRF7726PBF | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 7A 8-Pin Micro T/R 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 30V 7A 8PIN MICRO8 - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET P-Channel 30V 7A MSOP8 |
| IRF7726TR | 功能描述:MOSFET P-CH 30V 7A MICRO8 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF7726TRPBF | 功能描述:MOSFET MOSFT PCh -30V -7A 26mOhm 46nC Micro 8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7737L2TRPBF | 制造商:International Rectifier 功能描述:MOSFET, 40V, 1.9 MOHM, 89NC QG, DIRECTFET LARGE CAN - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET N CH 40V 315A DIRECTFET 制造商:International Rectifier 功能描述:MOSFET, 40V, 1.9 mO DirectFET Large Can |
發布緊急采購，3分鐘左右您將得到回復。