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參數(shù)資料
| 型號： | IRF7807A |
| 廠商： | International Rectifier |
| 元件分類： | DC/DC變換器 |
| 英文描述： | Chip-Set for DC-DC Converters |
| 中文描述： | 芯片組用于DC - DC轉換器 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 165K |
| 代理商： | IRF7807A |
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
≥
4.5V)
Pulsed Drain Current
Power Dissipation
Symbol
V
DS
V
GS
I
D
Max.
30
±12
8.3
6.6
66
2.5
1.6
3.5
2.2
Units
25°C
70°C
A
I
DM
P
D
25°C
70°C
Schottky and Body Diode
Average ForwardCurrent
Junction & Storage Temperature Range
25°C
70°C
I
F
(AV)
A
T
J
,
T
STG
–55 to 150
°C
Co-Pack N-channel HEXFET
Power MOSFET
and Schottky Diode
Ideal for Synchronous Rectifiers in DC-DC
Converters Up to 5A Output
Low Conduction Losses
Low Switching Losses
Low Vf Schottky Rectifier
FETKY
MOSFET / SCHOTTKY DIODE
Absolute Maximum Ratings
Parameter
Maximum Junction-to-Ambient
www.irf.com
Max.
50
Units
°C/W
R
θ
JA
Thermal Resistance
V
W
Description
The FETKY
family of Co-Pack HEXFET
MOSFETs and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Top View
8
1
2
3
4
5
6
7
A/S
A/S
A/S
G
K/D
K/D
D
K/D
K/D
IRF7807D1
PD- 93761
1
11/8/99
IRF7807D1
30V
25m
14nC
5.2nC
18.4nC
V
DS
R
DS(on)
Q
g
Q
sw
Q
oss
Device Features (Max Values)
SO-8
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|---|---|
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7807AHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC |
| IRF7807APBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 25mOhms 12nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7807ATR | 功能描述:MOSFET N-CH 30V 8.3A 8-SOIC RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF7807ATRPBF | 功能描述:MOSFET MOSFT 30V 6.6A 25mOhm 12nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7807D1 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:MOSFET / SCHOTTKY DIODE |
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